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BF370-AMMO

NXP Semiconductors

BF370-AMMO by NXP Semiconductors

BF370-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 2,554 parts In-Stock

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Digiode

USA . 1,935 parts In-Stock

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Vyrian

USA . 110 parts In-Stock

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Native Components

USA . 728 parts In-Stock

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$0.435

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$0.417

728

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Northwest PG Solutions

USA . 2,148 parts In-Stock

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$0.478

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$0.422

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One Stop Electronics

USA . 1,505 parts In-Stock

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$45.050

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$45.050

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UNI Independent Distributors

Spain . 5,187 parts In-Stock

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Corphita

USA . 3,826 parts In-Stock

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Overview

Unlock exceptional performance with the BF370-AMMO from NXP Semiconductors, a trusted leader in innovation. This high-quality small signal transistor is designed to elevate your amplifier applications, delivering reliability and efficiency. Its robust build ensures optimal performance even in demanding environments, making it perfect for audio devices and RF applications. Experience superior signal integrity and enhanced durability that keeps your projects ahead of the curve!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures robustness and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in amplifier circuits, providing efficient performance and versatility in various electronic designs.

Configuration: SINGLE

A single configuration allows for easier integration into circuits and minimizes space requirements.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures high-quality signal amplification for audio and other electronic signals.

Package Shape: ROUND

The round package shape aids in thermal dissipation, thereby enhancing performance during operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide solid mechanical support and reliability during assembly on circuit boards.

No. of Terminals: 3

Having three terminals simplifies the design and connection process, making it easy to use in various circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient use of space and easy mounting in different applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures effective signal amplification, contributing to the overall efficiency of amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function reliably in demanding environments without risk of overheating.

Maximum Collector-Emitter Voltage: 15 V

The 15 V collector-emitter voltage rating provides flexibility for a wide range of applications and protects the transistor from voltage spikes.

Transistor Element Material: SILICON

Silicon as the element material ensures good performance characteristics and reliability in various applications.

Maximum Collector Current (IC): 0.1 A

A collector current limit of 0.1 A is suitable for low to moderate power applications, making it a versatile choice for signal processing.

Terminal Position: BOTTOM

Bottom-positioned terminals enhance stability and support in PCB layouts, making it easier to design and assemble.

Nominal Transition Frequency (fT): 490 MHz

A nominal transition frequency of 490 MHz allows for high-speed operation, making it ideal for RF and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF370-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF370-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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