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BF370-T/R

NXP Semiconductors

BF370-T/R by NXP Semiconductors

BF370-T/R by NXP Semiconductors is an NPN small signal BJT ideal for amplifier applications. It features a max collector-emitter voltage of 15V, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its cylindrical package ensures easy integration in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,370 parts In-Stock

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2,370

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Digiode

USA . 2,263 parts In-Stock

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2,263

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Anansix

USA . 289 parts In-Stock

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289

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Distributors (Availability)

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Native Components

USA . 12 parts In-Stock

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$0.353

100+ parts

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$0.339

12

$0.353

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$0.339

Northwest PG Solutions

USA . 302 parts In-Stock

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$0.388

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$0.342

302

$0.388

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$0.342

One Stop Electronics

USA . 1,191 parts In-Stock

1+ parts

$8.050

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1,191

$8.050

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UNI Independent Distributors

Spain . 7,321 parts In-Stock

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7,321

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Corphita

USA . 1,194 parts In-Stock

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1,194

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Overview

Elevate your projects with the BF370-T/R from NXP Semiconductors, a trusted leader in innovative solutions. This high-quality NPN small signal transistor excels in amplifier applications, delivering robust performance and reliability. Designed with precision, its durable plastic/epoxy package ensures longevity even in demanding environments. Unlock new potential in audio and communication systems while benefiting from superior gain and efficiency—choose BF370-T/R for unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction offers robustness and environmental resistance, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE

Single configuration allows for simple integration into circuits, making it an ideal choice for basic amplification needs.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels in audio and signal processing applications.

Package Shape: ROUND

The round package shape allows for easy placement in circuits, particularly in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections, making it easier to solder and ensuring reliable performance in various environments.

No. of Terminals: 3

With three terminals, this transistor facilitates simple circuit configurations, suitable for various amplifier designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enhances thermal performance and helps in effective heat dissipation during operation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures sufficient amplification in low-power applications, making it a dependable choice.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function effectively in demanding thermal environments.

Maximum Collector-Emitter Voltage: 15 V

A maximum collector-emitter voltage of 15 V makes this transistor suitable for low-voltage applications, enhancing safety.

Transistor Element Material: SILICON

Silicon materials offer excellent performance characteristics, making this transistor reliable and efficient in various circuits.

Maximum Collector Current (IC): 0.1 A

With a collector current of 0.1 A, this transistor is adept at handling low to moderate current applications effectively.

Terminal Position: BOTTOM

Bottom terminal positioning allows for compact circuit designs and efficient use of space on printed circuit boards.

Nominal Transition Frequency (fT): 500 MHz

A transition frequency of 500 MHz indicates good high-frequency performance, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF370-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF370-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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