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BF370R-AMMO

NXP Semiconductors

BF370R-AMMO by NXP Semiconductors

BF370R-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,565 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 482 parts In-Stock

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UNI Independent Distributors

Spain . 4,985 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Unlock unparalleled performance with the BF370R-AMMO from NXP Semiconductors, a trusted name in innovation. Designed for efficiency in amplifier applications, this small signal BJT delivers reliable quality and robustness you can count on. Its compact, through-hole design ensures seamless integration into your projects, maximizing output while minimizing energy consumption. Elevate your electronic solutions with the exceptional reliability and advanced engineering that only NXP can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, making it suitable for compact applications.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor is ideal for boosting signal strength in audio and RF applications.

Package Shape: ROUND

The round package shape allows for efficient use of space in PCB layouts and can enhance thermal performance.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and ease of assembly, making it reliable for various board types.

No. of Terminals: 3

Having three terminals allows for essential connections for the collector, base, and emitter, enabling straightforward circuit integration.

Package Style (Meter): CYLINDRICAL

The cylindrical package style facilitates efficient use of space and may offer better thermal performance for heat dissipation.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 enables sufficient amplification for various signal levels, making it effective for different applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can perform reliably in demanding environments without risk of failure.

Maximum Collector-Emitter Voltage: 15 V

A maximum VCE of 15V allows for versatile usage in circuits that require moderate voltage levels, enhancing application range.

Transistor Element Material: SILICON

Silicon as the element material ensures good electrical characteristics, making the transistor suitable for high-performance applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A supports a moderate load, making it appropriate for low to medium power applications.

Terminal Position: BOTTOM

Bottom terminal positioning contributes to ease of soldering and enhances physical stability on circuit boards.

Nominal Transition Frequency (fT): 490 MHz

A transition frequency of 490 MHz indicates good high-frequency response, making it ideal for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF370R-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF370R-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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