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BF370R-T/R

NXP Semiconductors

BF370R-T/R by NXP Semiconductors

BF370R-T/R by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its cylindrical package allows for easy through-hole mounting.

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,775 parts In-Stock

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Anansix

USA . 1,710 parts In-Stock

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Digiode

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One Stop Electronics

USA . 508 parts In-Stock

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$18.050

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UNI Independent Distributors

Spain . 7,053 parts In-Stock

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Corphita

USA . 4,954 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Unlock innovative design potential with the BF370R-T/R from NXP Semiconductors, a trusted leader in high-quality semiconductor solutions. This versatile small-signal BJT excels in amplification applications, offering reliability and performance that engineers can count on. With its robust construction and efficient thermal handling, the BF370R-T/R empowers your projects, ensuring superior signal integrity and long-lasting durability. Elevate your designs with this invaluable component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making this transistor reliable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is well-suited for high-speed switching and amplification applications, providing versatility in circuit design.

Configuration: SINGLE

The single configuration allows for straightforward integration into circuits, making it ideal for simple applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can enhance signal quality, making it perfect for audio and RF applications.

Package Shape: ROUND

The round package shape contributes to better thermal performance and efficient usage of space on a circuit board.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides robust mechanical stability and ease of soldering, suitable for prototyping and hobbyist projects.

No. of Terminals: 3

With three terminals, this transistor allows for simple connections in circuits, optimizing layout and reducing complexity.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers an efficient design for thermal radiation and component reliability.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 indicates decent current amplification, making it effective for various amplification tasks in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature enhances reliability, allowing it to function in demanding environments without performance degradation.

Maximum Collector-Emitter Voltage: 15 V

With a collector-emitter voltage rating of 15 V, this transistor can safely handle medium voltage levels, ensuring practical usability in many applications.

Transistor Element Material: SILICON

Silicon as the elemental material promotes efficient switching and amplification characteristics, crucial for modern electronic circuits.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A allows this transistor to drive moderate loads, making it suitable for a range of applications.

Terminal Position: BOTTOM

With bottom positioned terminals, this transistor is optimized for space saving on PCBs, facilitating compact designs.

Nominal Transition Frequency (fT): 490 MHz

A transition frequency of 490 MHz ensures that this transistor can handle high-frequency applications effectively, suitable for RF and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF370R-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF370R-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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