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BCW70,235

NXP Semiconductors

BCW70,235 by NXP Semiconductors

BCW70,235 by NXP Semiconductors is a PNP BJT transistor with a max VCEsat of 0.3V and hFE of 215, ideal for switching applications. It has a max collector-emitter voltage of 45V, operates at up to 150°C, and features a small outline package style for compact designs.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

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-

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$0.066

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$0.055

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$0.049

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$0.066

$0.055

$0.049

DigiKey

USA . 30,000 parts In-Stock

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$0.080

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$0.080

Verical

USA . 30,000 parts In-Stock

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$0.061

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$0.061

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Digiode

USA . 1,942 parts In-Stock

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$0.024

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

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Anansix

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North Shore Components

USA . 180 parts In-Stock

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Corphita

USA . 3,277 parts In-Stock

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$0.022

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AZTECH Wire

Italy . 7,866 parts In-Stock

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$0.030

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Northwest PG Solutions

USA . 996 parts In-Stock

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$0.198

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996

$0.198

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Native Components

USA . 536 parts In-Stock

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$0.398

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$0.382

536

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Andel Nordic

Denmark . 478 parts In-Stock

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$0.880

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$0.613

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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Supply Digital

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Overview

Discover the BCW70,235 by NXP Semiconductors - a top-quality PNP Bipolar Junction Transistor designed for switching applications. With a robust design and excellent performance, this transistor offers reliability and efficiency in various electronic devices. Whether you're working on automotive, industrial, or consumer electronics projects, the BCW70,235 provides the value and benefits you need to bring your creations to life. Trust in NXP Semiconductors' expertise and experience to deliver a product that exceeds expectations in quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility.

Configuration: SINGLE

Simplified design with single configuration, making it easy to use in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time during assembly.

Maximum VCEsat: 0.3 V

Low saturation voltage improves efficiency and reduces power loss.

Package Shape: RECTANGULAR

Compact shape allows for space-saving placement on circuit boards.

Terminal Form: GULL WING

Offers secure and reliable connection to the circuit board.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 215

High current gain ensures amplification of signals with low input currents.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle relatively high voltage levels, suitable for various circuits.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many low-power applications.

Terminal Finish: TIN

Tin finish on terminals ensures good conductivity and solderability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures proper soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints during assembly.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speed in applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW70,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

215

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BCW70,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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