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74HC670NB

NXP Semiconductors

74HC670NB by NXP Semiconductors

74HC670NB by NXP is a 16-bit CMOS SRAM with asynchronous operation, ideal for automotive applications. It features a max access time of 59 ns and operates b/w 2V to 6V. Its dual terminal form and rectangular package ensure easy integration in various circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,648 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 236 parts In-Stock

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UNI Independent Distributors

Spain . 8,330 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Unlock unparalleled performance with the 74HC670NB from NXP Semiconductors—your go-to solution for reliable SRAM needs. Crafted with precision and backed by a leader in innovation, this component ensures exceptional speed and efficiency for automotive and industrial applications. Designed to withstand extreme temperatures while delivering optimal power management, it enhances system stability and longevity, giving you the competitive edge you need. Experience the difference with NXP's trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental stresses, making the product reliable for various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, providing flexibility in design.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for faster data access without needing a clock signal, enhancing system performance.

Nominal Supply Voltage / Vsup: 5 V

A nominal supply voltage of 5 V makes this SRAM compatible with a wide range of electronics, facilitating easy integration.

No. of Terminals: 16

With 16 terminals, this device provides ample connectivity options for various interfaces and is suitable for complex applications.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and helps reduce manufacturing complexity.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliable performance even in high-heat environments, essential for automotive applications.

Organization: 4X4

The 4X4 organization indicates efficient memory utilization, providing a suitable structure for various data storage requirements.

Output Characteristics: 3-STATE

3-state output characteristics allow multiple devices to connect to the same bus, preventing data conflicts and enhancing system versatility.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this SRAM is capable of functioning in extreme cold, making it ideal for automotive applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout, allowing for better design choices in compact spaces.

Minimum Supply Voltage (Vsup): 2 V

A minimum supply voltage of 2 V allows for operation in low-power applications, making this SRAM suitable for energy-efficient devices.

Temperature Grade: AUTOMOTIVE

Having an automotive temperature grade ensures that the product meets the stringent reliability requirements for automotive industry applications.

Technology: CMOS

The CMOS technology employed results in lower power consumption and higher density, adding to the efficiency and performance of the SRAM.

Parallel or Serial: PARALLEL

The parallel data access method facilitates high-speed data transfer, improving overall system performance in applications requiring rapid data retrieval.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliability in various mounting conditions, enhancing the robustness of the device.

No. of Words: 4 words

Having 4 words allows for simple data storage and processing in small applications, enabling quick and efficient access.

Memory Width: 4

A memory width of 4 bits is suitable for specific applications, allowing for aligned memory architecture in different use cases.

No. of Words Code: 4

With 4 words of code, this SRAM provides the necessary structure for application-focused data management, offering ease of programming.

Maximum Supply Voltage (Vsup): 6 V

A maximum supply voltage of 6 V provides flexibility in design choices, accommodating various operating conditions.

Memory Density: 16 bit

A memory density of 16 bits allows for efficient use of space while providing adequate storage for basic data needs.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type makes this memory IC easily available and widely supported in the industry, ensuring compatibility with numerous designs.

Maximum Access Time: 59 ns

A maximum access time of 59 ns enables quick data retrieval, ensuring the SRAM is suitable for time-sensitive applications.

Technical Specifications

SRAM 74HC670NB attributes and parameters. Explore more SRAM devices from NXP Semiconductors

Specs

Maximum Access Time:

59 ns

JESD-30 Code:

R-PDIP-T16

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4X4

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

74HC670NB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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