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BC817-40-QR

Nexperia

BC817-40-QR by Nexperia

BC817-40-QR by Nexperia is a NPN BJT transistor with VCEsat of 0.7V, hFE of 250, and IC of 0.5A. Ideal for switching applications in automotive electronics due to AEC-Q101 reference standard compliance and max operating temperature of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount assembly.

Median Price

$0.016

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 99,000 parts In-Stock

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TTI

USA . 51,000 parts In-Stock

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$0.016

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Arrow

USA . 9,000 parts In-Stock

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$0.011

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$0.011

Verical

USA . 9,000 parts In-Stock

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$0.019

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$0.019

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Nova Conductors

Japan . 10 parts In-Stock

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$0.041

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$0.041

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Maritex

Poland . 225,000 parts In-Stock

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$0.115

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$0.028

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$0.115

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$0.028

Chip Stock

USA . 147,000 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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$0.114

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Vyrian

USA . 7,796 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.078

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Sensible Micro Corp

USA . 2,764 parts In-Stock

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VNN

France . 1,017 parts In-Stock

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Ampacity Inc.

Singapore . 249,246 parts In-Stock

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$0.009

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Semicontronic

India . 198,772 parts In-Stock

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$0.009

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$0.009

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AZTECH Wire

Italy . 6,972 parts In-Stock

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$0.020

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Continental Prestige Electronics

USA . 6,851 parts In-Stock

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$0.041

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$0.040

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$0.040

Argo Parts USA

USA . 1,699 parts In-Stock

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$0.041

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$0.040

1,699

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$0.040

Netroflash

USA . 1,000 parts In-Stock

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$0.041

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$0.040

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$0.041

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Aztec Data Supply Inc.

USA . 2,277 parts In-Stock

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$0.318

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Corohmni

South Africa . 347 parts In-Stock

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Eastek

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GreenTree Electronics

Israel . 612,000 parts In-Stock

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Component Connect

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QUARKTWIN TECHNOLOGY LTD

USA . 2,952 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 2,000 parts In-Stock

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Supply Digital

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Overview

Unlock unparalleled performance and reliability with the BC817-40-QR by Nexperia, a top-quality NPN Small Signal Bipolar Junction Transistor designed for switching applications. With a minimum DC current gain of 250 and a maximum VCEsat of 0.7V, this transistor offers superior functionality and efficiency. Manufactured by industry leader Nexperia, known for their innovative solutions and cutting-edge technology, this product guarantees unmatched value and benefits to customers. Whether you are looking for high-speed switching or low power dissipation, the BC817-40-QR is the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, providing efficient control over current flow.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in applications requiring a single transistor.

Transistor Application: SWITCHING

Designed for efficient switching operations, suitable for applications requiring rapid on/off transitions.

Surface Mount: YES

Allows for easy and compact mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.7 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on circuit boards, enhancing manufacturing efficiency.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and facilitate soldering during assembly.

No. of Terminals: 3

Simplified terminal configuration for easier circuit integration and reduced complexity.

Maximum Power Dissipation (Abs): 0.345 W

Handles moderate power levels effectively, suitable for a range of applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on PCBs and provides a sleek design for modern electronic devices.

Minimum DC Current Gain (hFE): 250

Stable and high DC current gain ensures consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for demanding industrial applications.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

Provides a high voltage rating for the transistor, ensuring reliability and safety in varying voltage conditions.

Transistor Element Material: SILICON

Silicon-based transistor offers stable and consistent performance over a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Maintains functionality in extremely low temperatures, suitable for applications in harsh environments.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various switching and amplification tasks.

Terminal Finish: TIN

Tin finish provides corrosion resistance and enhances solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and enables versatile usage in different configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow process during assembly for reliable connections.

Peak Reflow Temperature °C: 260

Handles high-temperature reflow processes without compromising the integrity of the transistor.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality, reliability, and compatibility with various applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds and high-frequency performance in amplifier and oscillator circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-40-QR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC817-40-QR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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