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NP40N055MLE

Nec Electronics

NP40N055MLE by Nec Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN LEAD; Maximum Pulsed Drain Current (IDM): 100 A; Case Connection: DRAIN;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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56,986

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-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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13,000

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Technical Specifications

Power Field Effect Transistors (FET) NP40N055MLE attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Avalanche Energy Rating (EAS):

44 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP40N055MLE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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