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NE5500479A-T1

Nec Electronics

NE5500479A-T1 by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1 A; JESD-30 Code: R-PQMW-F4;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Assy Fe

Spain . 1,266 parts In-Stock

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1,266

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Perfect Parts

USA . 261 parts In-Stock

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261

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Technical Specifications

RF Power Field Effect Transistors (FET) NE5500479A-T1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PQMW-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE5500479A-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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