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NE5500179A-T1

Nec Electronics America

NE5500179A-T1 by Nec Electronics America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .25 A; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

A-Z Elektronik GmbH

Germany . 9,570 parts In-Stock

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9,570

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Technical Specifications

RF Power Field Effect Transistors (FET) NE5500179A-T1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-XQFP-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE5500179A-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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