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MRF5P20180R6

Motorola

MRF5P20180R6 by Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 407 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 1,982 parts In-Stock

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Vyrian

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Anansix

USA . 400 parts In-Stock

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One Stop Electronics

USA . 1,956 parts In-Stock

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$38.050

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Authorized Procurement Solutions

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Corphita

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UNI Independent Distributors

Spain . 2,791 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF5P20180R6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Motorola

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF5P20180R6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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