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2SC2134

Mitsubishi Electric

2SC2134 by Mitsubishi Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2134 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Mitsubishi Electric

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

120 W

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2134 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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