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APT50GP60B2DQ2G

Microsemi

APT50GP60B2DQ2G by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 600 V;

Median Price

$14.155

Lifecycle Status

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7

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Arrow

USA . 43 parts In-Stock

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$14.120

100+ parts

$12.382

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$14.120

$12.382

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Verical

USA . 43 parts In-Stock

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$14.120

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$12.382

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43

$14.120

$12.382

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Mouser Electronics

USA . 242 parts In-Stock

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$14.190

100+ parts

$12.480

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$11.700

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242

$14.190

$12.480

$11.700

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Microchip Technology

USA . 327 parts In-Stock

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$14.410

100+ parts

$12.450

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$11.420

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$11.040

327

$14.410

$12.450

$11.420

$11.040

DigiKey

USA . 34 parts In-Stock

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$14.410

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$11.700

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34

$14.410

$11.700

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Master Electronics

USA . 84 parts In-Stock

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$11.850

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$11.210

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84

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$11.850

$11.210

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Vyrian

USA . 7,414 parts In-Stock

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Component Stockers USA

USA . 11 parts In-Stock

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$13.660

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11

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Microchip USA

USA . 294 parts In-Stock

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$40.348

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$40.348

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Ledger Components

France . 7,227 parts In-Stock

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LOOK Integrated Logistics

Peru . 6,584 parts In-Stock

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NIA Electronics

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LMD Electronica

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Montano Global Distributors

Canada . 1,586 parts In-Stock

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Perfect Parts

USA . 41 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT50GP60B2DQ2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

200 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

APT50GP60B2DQ2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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