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APT100GT120JRDQ4

Microsemi

APT100GT120JRDQ4 by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 570 W; Maximum Collector Current (IC): 123 A; Terminal Form: UNSPECIFIED;

Median Price

$61.820

Lifecycle Status

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3

In-Stock Inventory

< 1k

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DigiKey

USA . 8 parts In-Stock

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$61.820

100+ parts

$50.175

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8

$61.820

$50.175

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Mouser Electronics

USA . 2 parts In-Stock

1+ parts

$61.820

100+ parts

$53.380

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2

$61.820

$53.380

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Microchip USA

USA . 6,936 parts In-Stock

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$142.186

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6,936

$142.186

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RGB Technical Solutions

Ukraine . 1,254 parts In-Stock

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1,254

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 11 parts In-Stock

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11

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT100GT120JRDQ4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

747 ns

Nominal Turn On Time (ton):

150 ns

Maximum VCEsat:

3.7 V

Trade Compliance

APT100GT120JRDQ4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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