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M45PE40-VMP6G

Micron Technology

M45PE40-VMP6G by Micron Technology

M45PE40-VMP6G by Micron Technology is a 512Kx8 NOR flash memory with SPI serial bus, operating at 33 MHz. It has a max clock frequency of 33 MHz and can endure up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

Median Price

$0.715

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 710 parts In-Stock

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$0.715

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710

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Chip Stock

USA . 16,600 parts In-Stock

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Digiode

USA . 5,439 parts In-Stock

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Classic Components Corporation

USA . 1,780 parts In-Stock

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1,780

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Bristol Electronics

USA . 634 parts In-Stock

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Atlantic Semiconductor

USA . 634 parts In-Stock

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Anansix

USA . 614 parts In-Stock

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Vyrian

USA . 172 parts In-Stock

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ComSIT Distribution GmbH

Germany . 71 parts In-Stock

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ComSIT USA

USA . 71 parts In-Stock

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J2 Sourcing AB

Sweden . 68 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 41 parts In-Stock

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Prism Electronics

USA . 11 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.701

100+ parts

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1k+ parts

$0.673

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500

$0.701

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$0.673

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Argo Parts USA

USA . 4,781 parts In-Stock

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$0.715

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$0.694

4,781

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$0.694

Continental Prestige Electronics

USA . 3,773 parts In-Stock

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$0.715

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$0.701

3,773

$0.715

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$0.701

Netroflash

USA . 1,000 parts In-Stock

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$0.715

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1,000

$0.715

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IDEA Electronic Components Group

UK . 594 parts In-Stock

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$2.525

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$2.273

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594

$2.525

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MKK Technologies

India . 2,176 parts In-Stock

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$4.749

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DigiPath Technology Company

USA . 2,176 parts In-Stock

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$4.749

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AZTECH Wire

Italy . 601 parts In-Stock

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$4.971

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601

$4.971

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Ampacity Inc.

Singapore . 2,248 parts In-Stock

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$24.000

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Component Stockers USA

USA . 730 parts In-Stock

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$99.990

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730

$99.990

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Corphita

USA . 4,038 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 2,031 parts In-Stock

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2,031

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Parana Technologies

USA . 1,462 parts In-Stock

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$3.020

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Microchip USA

USA . 110 parts In-Stock

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Kepictronics

USA . 90 parts In-Stock

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Assy Fe

Spain . 41 parts In-Stock

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Overview

Unlock the power of reliable data storage with Micron Technology's M45PE40-VMP6G Flash Memory. This innovative product offers a seamless user experience with its synchronous operating mode and versatile applications. With a small outline package style and high endurance of 100,000 write/erase cycles, this memory device ensures long-lasting performance. Whether you're in the industrial sector or require data storage for your consumer electronics, the M45PE40-VMP6G provides unparalleled value and reliability. Trust Micron Technology for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and secure mounting onto PCBs, making it convenient for integration into electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfer is synchronized with a clock signal, leading to faster and more efficient performance.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage of 3V ensures consistent and reliable operation of the flash memory.

Write Protection: HARDWARE/SOFTWARE

Multiple layers of write protection, both hardware and software-based, help safeguard the stored data from accidental modifications or corruption.

Endurance: 100000 Write/Erase Cycles

High endurance rating of 100,000 write/erase cycles ensures durability and longevity of the flash memory, making it suitable for frequent data read/write operations.

Serial Bus Type: SPI

Serial Peripheral Interface (SPI) communication protocol facilitates easy interfacing with other devices, enabling seamless data transfer and integration in various systems.

Technical Specifications

Flash Memory M45PE40-VMP6G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

33 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-XDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

5 mm

Maximum Write Cycle Time (tWC):

25 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M45PE40-VMP6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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