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MPL4700-206-HS

Microchip Technology

MPL4700-206-HS by Microchip Technology

MPL4700-206-HS by Microchip Technology is a single PIN diode with ultra high frequency to X band range. Featuring 0.15 pF diode capacitance, it operates b/w -55°C to 150°C. Ideal for applications requiring low forward resistance and breakdown voltage of 25V, such as RF switches and attenuators.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,441 parts In-Stock

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Bristol Electronics

USA . 884 parts In-Stock

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884

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,684 parts In-Stock

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$0.052

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1,684

$0.052

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Corohmni

South Africa . 166 parts In-Stock

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$0.138

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166

$0.138

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Ampacity Inc.

Singapore . 504 parts In-Stock

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$1.010

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504

$1.010

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AZTECH Wire

Italy . 593 parts In-Stock

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$6.699

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593

$6.699

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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RGB Technical Solutions

Ukraine . 2,497 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,473 parts In-Stock

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Argo Parts USA

USA . 654 parts In-Stock

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Overview

Elevate your electronics with the MPL4700-206-HS by Microchip Technology. Known for their top-notch quality and reliability, this PIN diode offers ultra-high frequency to X band capabilities in a convenient single configuration. Perfect for a wide range of applications, from telecommunications to radar systems, this chip carrier package provides exceptional performance with its low diode capacitance and high breakdown voltage. Unlock the potential of your projects with the MPL4700-206-HS and experience the value and benefits that only Microchip Technology can deliver.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy integration into existing circuit designs.

Frequency Band: ULTRA HIGH FREQUENCY TO X BAND

Wide frequency band coverage makes it suitable for a variety of applications requiring high frequency operation.

Surface Mount: YES

Surface mount capability enables easy assembly onto circuit boards, saving space and simplifying manufacturing processes.

Maximum Diode Capacitance: 0.15 pF

Low diode capacitance ensures minimal signal distortion and high frequency operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on circuit boards.

No. of Terminals: 2

Simple two-terminal design simplifies circuit connections and reduces complexity.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides protection and heat dissipation for the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can function in extreme cold conditions.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and connection to the circuit board.

Maximum Diode Forward Resistance: 2 ohm

Low forward resistance ensures efficient power transmission and minimal signal loss.

Minimum Breakdown Voltage: 25 V

High breakdown voltage protects the diode from voltage spikes and ensures long-term durability.

Diode Type: PIN DIODE

PIN diode technology offers fast switching speeds and high linearity for RF applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

PIN diode technology provides low distortion and high power handling capability.

Terminal Form: NO LEAD

No lead terminal form eliminates the risk of lead contamination and simplifies recycling.

Diode Element Material: SILICON

Silicon diode element material offers stable performance over a wide temperature range.

Technical Specifications

PIN Diodes MPL4700-206-HS attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Maximum Diode Capacitance:

.15 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY TO X BAND

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

MPL4700-206-HS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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