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MPL4703-406/TR

Microchip Technology

MPL4703-406/TR by Microchip Technology

MPL4703-406/TR by Microchip Tech is a single PIN diode for X band applications. Features include 0.3 pF capacitance, 3 ohm forward resistance, and 25V breakdown voltage. Ideal for RF switching in high-temp environments with -55 to 150°C range.

Median Price

$7.750

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 893 parts In-Stock

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$7.750

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RFMW

USA . 630 parts In-Stock

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630

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QUARKTWIN TECHNOLOGY LTD

USA . 16,108 parts In-Stock

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LMD Electronica

Estonia . 4,408 parts In-Stock

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NIA Electronics

USA . 4,268 parts In-Stock

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Ledger Components

France . 4,268 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Microchip USA

USA . 2,991 parts In-Stock

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LOOK Integrated Logistics

Peru . 1,998 parts In-Stock

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Montano Global Distributors

Canada . 414 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MPL4703-406/TR PIN Diode by Microchip Technology. Designed for X Band applications, this high-quality single-configured diode offers superior performance and reliability. Whether you're in radar systems, RF switches, or RF attenuators, this chip carrier package delivers exceptional value with its low diode capacitance and resistance. Trust Microchip Technology to provide innovative solutions that exceed your expectations. Elevate your designs with the MPL4703-406/TR and experience the difference today.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and allows for easy integration into various systems.

Frequency Band: X BAND

Ideal for applications in the X band frequency range, ensuring compatibility with a wide range of systems and devices.

Surface Mount: YES

Surface mount capability enables easy and secure mounting onto circuit boards, saving space and enhancing reliability.

Maximum Diode Capacitance: 0.3 pF

Low diode capacitance ensures minimal signal distortion and high frequency operation, making it suitable for high-performance applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement and alignment within circuits, optimizing performance and ease of assembly.

No. of Terminals: 2

Having only 2 terminals simplifies connection and integration into circuits, reducing complexity and potential points of failure.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers durability and protection for the diode, ensuring long-term reliability in various environmental conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding thermal environments without risk of overheating.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables usability in extreme cold conditions, providing versatility and reliability in various applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure connection to circuit boards, enhancing stability and ease of integration.

Maximum Diode Forward Resistance: 3 ohm

Low diode forward resistance minimizes signal loss and power consumption, optimizing efficiency and performance in high-frequency applications.

Minimum Breakdown Voltage: 25 V

High minimum breakdown voltage ensures reliable operation and protection against voltage spikes, enhancing overall system robustness.

Diode Resistive Test Current: 10 mA

Optimal test current for accurately measuring diode properties and ensuring consistent performance in various test conditions.

Diode Type: PIN DIODE

PIN diode technology offers fast switching speed, high power handling capability, and low distortion, making it suitable for RF and microwave applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology ensures stable and predictable diode behavior, leading to reliable performance in complex electronic systems.

Terminal Form: NO LEAD

No lead terminal form simplifies assembly and integration, reducing the risk of soldering errors and enhancing overall product reliability.

Diode Element Material: SILICON

Silicon diode element material offers high temperature tolerance, low noise, and excellent performance characteristics, ensuring long-lasting and efficient operation.

Technical Specifications

PIN Diodes MPL4703-406/TR attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Maximum Diode Capacitance:

.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

3 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

X BAND

JESD-30 Code:

R-XBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Trade Compliance

MPL4703-406/TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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