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MPL4703-406

Microchip Technology

MPL4703-406 by Microchip Technology

MPL4703-406 by Microchip Tech is a single PIN diode for X Band applications. Features include 0.3 pF capacitance, 3 ohm forward resistance, and 25V breakdown voltage. Ideal for RF switches in communication systems due to its positive-intrinsic-negative technology.

Median Price

$8.100

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RFMW

USA . 100 parts In-Stock

1+ parts

$8.100

100+ parts

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10k+ parts

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100

$8.100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 139 parts In-Stock

1+ parts

$7.330

100+ parts

$7.330

1k+ parts

-

10k+ parts

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139

$7.330

$7.330

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Microchip USA

USA . 3,802 parts In-Stock

1+ parts

$25.368

100+ parts

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10k+ parts

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3,802

$25.368

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RGB Technical Solutions

Ukraine . 5,608 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,608

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Unleash the power of the MPL4703-406 by Microchip Technology, a top-tier PIN diode designed to elevate your X BAND applications to new heights. Crafted with precision and expertise by Microchip Technology, this single-configured diode boasts unrivaled quality and reliability. From high-speed switching to RF signal processing, this diode delivers exceptional performance in a compact chip carrier package. Experience seamless integration and superior functionality with the MPL4703-406, offering unparalleled value and efficiency for all your electronic projects. Elevate your designs with Microchip Technology today.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to integrate and use in various applications.

Frequency Band: X BAND

X Band frequency band allows for high frequency applications, making it suitable for advanced communication systems.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on circuit boards.

Maximum Diode Capacitance: 0.3 pF

Low diode capacitance ensures minimal interference and high performance in high frequency applications.

Package Shape: RECTANGULAR

Rectangular package shape provides efficient and compact design for space-saving installations.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enhances reliability.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers protection and durability for the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and performance in various operating conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for usage in extreme cold environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and connection in circuit layouts.

Maximum Diode Forward Resistance: 3 ohm

Low diode forward resistance results in efficient and effective signal transmission.

Minimum Breakdown Voltage: 25 V

High breakdown voltage ensures reliable operation and protection against voltage spikes.

Diode Resistive Test Current: 10 mA

Suitable test current for checking diode functionality without causing damage.

Diode Type: PIN DIODE

PIN diode type offers high switching speed and low distortion, making it ideal for RF and microwave applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

PIN diode technology provides excellent linearity and power handling capabilities.

Terminal Form: NO LEAD

No lead terminal form enhances reliability by reducing the risk of solder joint failures.

Diode Element Material: SILICON

Silicon diode element material offers high performance and robustness for long-lasting use.

Technical Specifications

PIN Diodes MPL4703-406 attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Maximum Diode Capacitance:

.3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

3 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

X BAND

JESD-30 Code:

R-XBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Trade Compliance

MPL4703-406 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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