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APT100GT120JRDQ4

Microchip Technology

APT100GT120JRDQ4 by Microchip Technology

Microchip Technology's APT100GT120JRDQ4 is an N-CHANNEL IGBT with 1200V VCEsat, 123A IC, and 570W power dissipation. Ideal for power control applications, it features a built-in diode, 747ns turn-off time, and operates up to 150°C.

Median Price

$61.820

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8 parts In-Stock

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$61.820

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$50.175

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8

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Mouser Electronics

USA . 2 parts In-Stock

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$61.820

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$53.380

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2

$61.820

$53.380

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Distributors (In-Stock)

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Microchip USA

USA . 6,936 parts In-Stock

1+ parts

$142.186

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6,936

$142.186

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RGB Technical Solutions

Ukraine . 1,254 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Perfect Parts

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Overview

Enhance your power control applications with the APT100GT120JRDQ4 from Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality insulated gate bipolar transistors that provide reliable performance and efficiency. With its N-channel polarity and built-in diode configuration, this transistor offers maximum power dissipation of 570W and a collector-emitter voltage of 1200V to meet your power control needs. Trust Microchip Technology's APT100GT120JRDQ4 for superior performance and durability in your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher current carrying capacity compared to P-CHANNEL IGBTs, making them more efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and efficient freewheeling operation in inductive loads, improving overall system reliability.

Transistor Application: POWER CONTROL

Designed for power control applications, this IGBT is suitable for controlling high power levels in various industrial and commercial systems.

Maximum VCEsat: 3.7 V

Low VCEsat helps in reducing power losses and improving efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular package shape offers convenient mounting options and efficient heat dissipation for better overall performance.

Nominal Turn Off Time (toff): 747 ns

Fast turn-off time ensures quick switching speed, which is crucial for high frequency power control applications.

Maximum Power Dissipation (Abs): 570 W

High power dissipation capability allows for reliable operation under high load conditions, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting, ensuring durability in various operating environments.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows for reliable performance in harsh industrial environments without compromising functionality.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating ensures high voltage blocking capability, making it suitable for high power applications where voltage spikes may occur.

Transistor Element Material: SILICON

Silicon-based IGBTs offer good thermal conductivity and high temperature stability, ensuring reliable performance under varying operating conditions.

Maximum Gate-Emitter Voltage: 20 V

Low gate-emitter voltage requirement allows for easy drive circuit design and compatibility with standard control signals in power control applications.

Maximum Collector Current (IC): 123 A

High collector current rating enables handling of large current flows, making it suitable for high power applications that require heavy current handling capability.

Terminal Position: UPPER

Upper terminal position offers convenient connectivity options and easy integration into existing system layouts for efficient power control.

Case Connection: ISOLATED

Isolated case connection ensures safety and protection against electrical short circuits, enhancing overall system reliability and longevity.

Nominal Turn On Time (ton): 150 ns

Fast turn-on time ensures quick response and high switching speeds, essential for precise control in power electronics applications.

Reference Standard: UL RECOGNIZED

UL recognition signifies compliance with safety standards and regulations, ensuring quality and reliability in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT100GT120JRDQ4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

747 ns

Nominal Turn On Time (ton):

150 ns

Maximum VCEsat:

3.7 V

Trade Compliance

APT100GT120JRDQ4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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