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23LCV512T-I/SN

Microchip Technology

23LCV512T-I/SN by Microchip Technology

Microchip Technology's 23LCV512T-I/SN is a small outline SRAM with 64KX8 organization, operating at up to 20 MHz. Ideal for industrial applications, it features a serial interface, operates b/w -40 to 85 °C, and has a memory density of 524288 bit.

Median Price

$2.165

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 2,400 parts In-Stock

1+ parts

$2.070

100+ parts

$1.910

1k+ parts

$1.810

10k+ parts

$1.700

2,400

$2.070

$1.910

$1.810

$1.700

DigiKey

USA . 2,986 parts In-Stock

1+ parts

$2.260

100+ parts

-

1k+ parts

-

10k+ parts

$2.072

2,986

$2.260

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-

$2.072

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 3,410 parts In-Stock

1+ parts

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3,410

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Sensible Micro Corp

USA . 1,500 parts In-Stock

1+ parts

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1,500

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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10

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ComSIT Distribution GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,894 parts In-Stock

1+ parts

$1.670

100+ parts

-

1k+ parts

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10k+ parts

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1,894

$1.670

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Corohmni

South Africa . 462 parts In-Stock

1+ parts

$5.480

100+ parts

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462

$5.480

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iodParts Technologies Inc.

India . 5,424 parts In-Stock

1+ parts

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5,424

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Argo Parts USA

USA . 5,233 parts In-Stock

1+ parts

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5,233

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Marpe Global Electronics

Taiwan . 1,023 parts In-Stock

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1,023

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QualityLine Systems

Poland . 1,023 parts In-Stock

1+ parts

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1,023

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XL Components Corporation

Australia . 1,023 parts In-Stock

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1,023

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Continental Prestige Electronics

USA . 997 parts In-Stock

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997

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable data storage with the 23LCV512T-I/SN by Microchip Technology. As a leading manufacturer in the industry, Microchip delivers top-quality SRAM products that excel in performance and durability. Ideal for various applications, this small outline memory device offers customers a seamless experience with its common I/O type and 3-state output characteristics. With a wide operating temperature range and low standby voltage requirements, the 23LCV512T-I/SN provides exceptional value and efficiency for your projects. Experience the superior benefits and advantages of this industrial-grade memory IC today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer, improving overall efficiency and performance.

Maximum Operating Temperature: 85 °C

Allows for operation in a wide range of temperature environments, increasing versatility.

Technology: CMOS

Utilizes advanced CMOS technology for low power consumption and improved performance.

Memory IC Type: STANDARD SRAM

Uses standard SRAM memory for reliable and fast data storage and retrieval.

Technical Specifications

SRAM 23LCV512T-I/SN attributes and parameters. Explore more SRAM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

2.5 V

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

23LCV512T-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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