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23K256-I/ST

Microchip Technology

23K256-I/ST by Microchip Technology

23K256-I/ST by Microchip Technology is a SRAM with 32Kx8 organization, operating at 20MHz clock frequency. It has a supply voltage of 3V and operates in industrial temperature range. Ideal for applications requiring fast synchronous memory access in compact designs.

Median Price

$1.331

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 26 parts In-Stock

1+ parts

$0.333

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26

$0.333

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Chip1Stop

Japan . 169 parts In-Stock

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$1.190

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169

$1.190

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Mouser Electronics

USA . 318 parts In-Stock

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$1.420

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318

$1.420

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DigiKey

USA . 900 parts In-Stock

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$1.430

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900

$1.430

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Verical

USA . 169 parts In-Stock

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$1.331

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169

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$1.331

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 200 parts In-Stock

1+ parts

$1.570

100+ parts

$1.420

1k+ parts

$1.270

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-

200

$1.570

$1.420

$1.270

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VNN

France . 527 parts In-Stock

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527

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ComSIT Distribution GmbH

Germany . 279 parts In-Stock

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279

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RLX Solution Inc.

Canada . 210 parts In-Stock

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210

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Technoshack Inc.

Canada . 19 parts In-Stock

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Bristol Electronics

USA . 10 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,108 parts In-Stock

1+ parts

$0.461

100+ parts

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2,108

$0.461

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Continental Prestige Electronics

USA . 39 parts In-Stock

1+ parts

$1.090

100+ parts

$1.060

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39

$1.090

$1.060

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Andel Nordic

Denmark . 2,489 parts In-Stock

1+ parts

$7.612

100+ parts

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$7.308

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$7.308

2,489

$7.612

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$7.308

$7.308

RC Electronics

USA . 30,835 parts In-Stock

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30,835

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Fulton Briggs Corp.

USA . 4,918 parts In-Stock

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4,918

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Perfect Parts

USA . 3,332 parts In-Stock

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3,332

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Elevate your electronic projects to a whole new level with the 23K256-I/ST by Microchip Technology. This high-quality SRAM device offers unrivaled performance and reliability, thanks to the exceptional manufacturing standards of Microchip Technology. Ideal for a wide range of applications, this product provides customers with seamless functionality and advanced capabilities. Experience the value and benefits of cutting-edge technology with the 23K256-I/ST, where quality meets innovation. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the SRAM chip.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on circuit boards.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard 3V supply voltage, suitable for many applications.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial environments.

Organization: 32KX8

Organized in a 32K x 8 memory configuration, providing ample storage capacity.

Technology: CMOS

Utilizes CMOS technology for low power consumption and fast operation.

Parallel or Serial: SERIAL

Serial interface allows for easy integration with other digital components.

Technical Specifications

SRAM 23K256-I/ST attributes and parameters. Explore more SRAM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000004 Amp

Minimum Standby Voltage:

2.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Trade Compliance

23K256-I/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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