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IXFA10N60P

IXYS Corporation

IXFA10N60P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;

Median Price

$4.575

Lifecycle Status

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4

In-Stock Inventory

< 1k

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Mouser Electronics

USA . 215 parts In-Stock

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$4.550

100+ parts

$2.340

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$1.930

10k+ parts

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215

$4.550

$2.340

$1.930

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DigiKey

USA . 188 parts In-Stock

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$4.600

100+ parts

$2.346

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$1.936

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188

$4.600

$2.346

$1.936

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Ozdisan Elektronik

Türkiye . 324 parts In-Stock

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$3.664

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324

$3.664

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NAC Semi

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$5.940

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$5.480

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224

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$5.940

$5.480

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Distributors (Availability)

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.923

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$1.750

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$1.577

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1,000

$1.923

$1.750

$1.577

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Andel Nordic

Denmark . 32 parts In-Stock

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$9.513

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$9.132

10k+ parts

$9.132

32

$9.513

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$9.132

$9.132

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

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12,393

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Microchip USA

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Perfect Parts

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GreenTree Electronics

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28

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Technical Specifications

Power Field Effect Transistors (FET) IXFA10N60P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.74 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFA10N60P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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