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JANSR2N7481U3

International Rectifier

JANSR2N7481U3 by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 88 A;

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Digiode

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PC Components Company LLC

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Modulus Dynamics

Lithuania . 10,285 parts In-Stock

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$0.758

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Technical Specifications

Power Field Effect Transistors (FET) JANSR2N7481U3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

70 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

22 A

Maximum Drain Current (ID):

22 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JESD-30 Code:

R-CBCC-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

88 A

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

65 ns

Maximum Turn On Time (ton):

125 ns

Trade Compliance

JANSR2N7481U3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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