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IRGP4066DPBF

International Rectifier

IRGP4066DPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Terminal Position: SINGLE;

Median Price

$8.350

Lifecycle Status

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9

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Rochester

USA . 25 parts In-Stock

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$5.400

100+ parts

$5.290

1k+ parts

$5.180

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25

$5.400

$5.290

$5.180

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DigiKey

USA . 2 parts In-Stock

1+ parts

$11.280

100+ parts

$8.755

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$7.788

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2

$11.280

$8.755

$7.788

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Verical

USA . 168 parts In-Stock

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$8.350

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$7.550

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168

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$8.350

$7.550

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Vyrian

USA . 509 parts In-Stock

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$2.350

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509

$2.350

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Digiode

USA . 244 parts In-Stock

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$6.754

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

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Chip Stock

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Nova Conductors

Japan . 85 parts In-Stock

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Prism Electronics

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Modulus Dynamics

Lithuania . 24,672 parts In-Stock

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$1.953

100+ parts

$1.875

1k+ parts

$1.797

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24,672

$1.953

$1.875

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Corphita

USA . 123 parts In-Stock

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$6.399

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Continental Prestige Electronics

USA . 92 parts In-Stock

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$17.770

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$16.350

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$17.770

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Microchip USA

USA . 7,049 parts In-Stock

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$19.096

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

Germany . 3,260 parts In-Stock

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Netroflash

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Perfect Parts

USA . 1,322 parts In-Stock

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iodParts Technologies Inc.

India . 954 parts In-Stock

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$3.842

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954

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Kepictronics

USA . 650 parts In-Stock

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650

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP4066DPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

80 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

90 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

310 ns

Nominal Turn On Time (ton):

120 ns

Trade Compliance

IRGP4066DPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Category top products 20

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