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IRGP35B60PD-EP

International Rectifier

IRGP35B60PD-EP by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel;

Median Price

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Lifecycle Status

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In-Stock Inventory

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Vyrian

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541

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Digiode

USA . 39 parts In-Stock

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Modulus Dynamics

Lithuania . 2,449 parts In-Stock

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$0.585

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$0.562

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$0.538

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2,449

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$0.562

$0.538

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Ampacity Inc.

Singapore . 1,557 parts In-Stock

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$35.050

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Perfect Parts

USA . 4,426 parts In-Stock

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4,426

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Corphita

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Microchip USA

USA . 421 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP35B60PD-EP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY, LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

16 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

11 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

142 ns

Nominal Turn On Time (ton):

34 ns

Trade Compliance

IRGP35B60PD-EP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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