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IRGIB15B60KD1

International Rectifier

IRGIB15B60KD1 by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Collector Current (IC): 19 A; Maximum Fall Time (tf): 73 ns;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 976 parts In-Stock

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976

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Vyrian

USA . 901 parts In-Stock

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901

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Modulus Dynamics

Lithuania . 22,179 parts In-Stock

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$1.533

100+ parts

$1.472

1k+ parts

$1.410

10k+ parts

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22,179

$1.533

$1.472

$1.410

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A-Z Elektronik GmbH

Germany . 5,114 parts In-Stock

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5,114

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Alle Elektronik GmbH

Germany . 3,409 parts In-Stock

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3,409

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Corphita

USA . 720 parts In-Stock

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720

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGIB15B60KD1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

ULTRA FAST SOFT RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

73 ns

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

35 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

250 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

IRGIB15B60KD1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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