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IRGB10B60KD

International Rectifier

IRGB10B60KD by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 22 A; Maximum Rise Time (tr): 29 ns;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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PC Components Company LLC

USA . 993 parts In-Stock

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Vyrian

USA . 992 parts In-Stock

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Bristol Electronics

USA . 983 parts In-Stock

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Digiode

USA . 266 parts In-Stock

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Modulus Dynamics

Lithuania . 13,929 parts In-Stock

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$0.566

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$0.543

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$0.521

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Ampacity Inc.

Singapore . 1,146 parts In-Stock

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$29.050

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Perfect Parts

USA . 30,240 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,028 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,685 parts In-Stock

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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Corphita

USA . 452 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGB10B60KD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

34 ns

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

29 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

253 ns

Nominal Turn On Time (ton):

50 ns

Trade Compliance

IRGB10B60KD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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