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IRG7PH42UPBF

International Rectifier

IRG7PH42UPBF by International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; JESD-609 Code: e3;

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Advanced Electronics

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$1.882

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Modulus Dynamics

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG7PH42UPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

86 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

30 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

41 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Trade Compliance

IRG7PH42UPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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