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IRFL024NTR

International Rectifier

IRFL024NTR by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain Current (ID): 2.8 A; Transistor Element Material: SILICON;

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Advanced Electronics

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$0.629

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$0.567

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20

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Modulus Dynamics

Lithuania . 7,719 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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CPlus Electronics

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A-Z Elektronik GmbH

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRFL024NTR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

2.8 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PSSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFL024NTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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