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IRF7855TRPBF

Infineon Technologies

IRF7855TRPBF by Infineon Technologies

IRF7855TRPBF by Infineon Technologies is a N-CHANNEL FET with 60V DS Breakdown Voltage and 97A IDM. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.5W.

Median Price

$1.084

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 526 parts In-Stock

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$0.250

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$0.250

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Adafruit Industries

USA . 17 parts In-Stock

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$1.215

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$1.155

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$1.155

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$1.215

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$1.155

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Mouser Electronics

USA . 25,913 parts In-Stock

1+ parts

$2.260

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$0.968

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$0.703

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$0.624

25,913

$2.260

$0.968

$0.703

$0.624

Chip1Stop

Japan . 8,000 parts In-Stock

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$2.620

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$1.530

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$2.620

$1.530

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DigiKey

USA . 2,951 parts In-Stock

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$2.630

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$1.150

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$0.847

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$0.670

2,951

$2.630

$1.150

$0.847

$0.670

Future Electronics

Canada . 52,000 parts In-Stock

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Verical

USA . 20,000 parts In-Stock

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$0.535

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Arrow

USA . 8,000 parts In-Stock

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$0.506

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Farnell

UK . 5,194 parts In-Stock

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$1.084

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$0.789

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$0.783

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$1.084

$0.789

$0.783

Element14

Singapore . 5,194 parts In-Stock

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$1.120

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$0.816

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$0.808

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$0.816

$0.808

Rochester

USA . 998 parts In-Stock

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$0.674

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$0.559

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$0.499

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$0.499

Distributors (In-Stock)

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Digiode

USA . 74 parts In-Stock

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$0.527

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$0.527

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Nova Conductors

Japan . 15 parts In-Stock

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$1.175

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$1.175

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Maritex

Poland . 4,098 parts In-Stock

1+ parts

$1.546

100+ parts

$0.796

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$0.624

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4,098

$1.546

$0.796

$0.624

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Ozdisan Elektronik

Türkiye . 45,156 parts In-Stock

1+ parts

$57.130

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IBS Electronics

USA . 60,000 parts In-Stock

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$0.596

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NAC Semi

USA . 24,000 parts In-Stock

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Chip Stock

USA . 13,510 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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Schukat

Germany . 4,300 parts In-Stock

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$0.832

1k+ parts

$0.693

10k+ parts

$0.668

4,300

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$0.832

$0.693

$0.668

Rutronik

Germany . 4,000 parts In-Stock

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$0.558

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$0.558

ComSIT Distribution GmbH

Germany . 2,888 parts In-Stock

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PC Components Company LLC

USA . 77 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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Semicontronic

India . 12,347 parts In-Stock

1+ parts

$0.472

100+ parts

$0.460

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$0.458

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12,347

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Corphita

USA . 793 parts In-Stock

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$0.500

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Ampacity Inc.

Singapore . 12,101 parts In-Stock

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$0.540

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Argo Parts USA

USA . 4,911 parts In-Stock

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$0.912

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Netroflash

USA . 500 parts In-Stock

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$1.175

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$1.175

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Modulus Dynamics

Lithuania . 7,232 parts In-Stock

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$1.180

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$1.133

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$1.086

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7,232

$1.180

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$1.086

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Corohmni

South Africa . 90 parts In-Stock

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$1.180

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Advanced Electronics

New Zealand . 17 parts In-Stock

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$1.215

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$1.155

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17

$1.215

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$1.155

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Continental Prestige Electronics

USA . 6,863 parts In-Stock

1+ parts

$1.790

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$1.140

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$0.835

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6,863

$1.790

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Aztec Data Supply Inc.

USA . 1,174 parts In-Stock

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$1.943

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Microchip USA

USA . 6,594 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 71,220 parts In-Stock

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Eastek

USA . 52,000 parts In-Stock

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GreenTree Electronics

Israel . 47,774 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Glotronic Ltd.

UK . 16,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,193 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,795 parts In-Stock

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Component Stockers USA

USA . 1,209 parts In-Stock

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$0.850

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$0.650

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$0.580

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$0.580

Assy Fe

Spain . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 50 parts In-Stock

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Overview

Discover the power and precision of the Infineon Technologies IRF7855TRPBF Small Signal Field Effect Transistor. Designed with superior quality and reliability, this N-channel transistor is perfect for switching applications. With a maximum drain current of 12A and a low on-resistance of 0.0094 ohm, this transistor offers unmatched performance. Whether you're looking to optimize your power management or enhance your circuit designs, the IRF7855TRPBF delivers exceptional value and efficiency. Upgrade your projects today with this cutting-edge technology from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds, making this transistor efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse voltage protection, enhancing the reliability of the transistor in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Maximum Drain Current (Abs) (ID): 12 A

With a high maximum drain current rating, this transistor can handle larger loads and high current applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable performance in a wide range of environmental conditions.

Maximum Drain-Source On Resistance: 0.0094 ohm

Low on-resistance results in minimal power loss and higher efficiency in the transistor's operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF7855TRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

540 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.0094 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

120 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

97 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7855TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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