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IRF6216TRPBF-1

Infineon Technologies

IRF6216TRPBF-1 by Infineon Technologies

IRF6216TRPBF-1 by Infineon is a P-channel FET with 150V breakdown voltage, 2.2A max drain current, and 0.24 ohm on-resistance. Ideal for enhancement mode operation in applications requiring high power efficiency and compact design due to its small outline package and built-in diode.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Avnet

USA . 4,000 parts In-Stock

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Vyrian

USA . 1,067 parts In-Stock

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1,067

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Digiode

USA . 939 parts In-Stock

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939

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Aztec Data Supply Inc.

USA . 2,826 parts In-Stock

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$0.620

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$0.620

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Corohmni

South Africa . 335 parts In-Stock

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$0.710

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335

$0.710

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Modulus Dynamics

Lithuania . 3,432 parts In-Stock

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$0.934

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$0.897

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$0.859

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$0.934

$0.897

$0.859

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.888

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$1.794

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$1.794

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$1.888

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AZTECH Wire

Italy . 353 parts In-Stock

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$14.780

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353

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Semicontronic

India . 1,603 parts In-Stock

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$42.050

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$40.999

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$40.788

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1,603

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$40.788

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Ampacity Inc.

Singapore . 287 parts In-Stock

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$48.050

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287

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QUARKTWIN TECHNOLOGY LTD

USA . 23,733 parts In-Stock

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GreenTree Electronics

Israel . 18,396 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 6,116 parts In-Stock

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Argo Parts USA

USA . 2,533 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Corphita

USA . 403 parts In-Stock

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Overview

Upgrade your electronic projects with the IRF6216TRPBF-1 from Infineon Technologies. With a reputation for top-quality manufacturing, this P-Channel Small Signal FET offers reliable performance and versatility in a variety of applications. Its built-in diode and enhancement mode configuration make it ideal for power management, motor control, and other demanding tasks. Experience the value and benefits of this high-performance transistor for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are preferred or required.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuit designs that require a built-in diode functionality.

Surface Mount: YES

Easy to mount on a PCB, saving space and allowing for automated assembly.

Minimum DS Breakdown Voltage: 150 V

Can withstand higher voltage levels, making it suitable for a variety of applications.

Package Shape: RECTANGULAR

Compact shape for efficient use of space on the PCB.

Terminal Form: GULL WING

Facilitates easy soldering onto the PCB for quick and reliable connections.

Operating Mode: ENHANCEMENT MODE

Can be easily controlled by a voltage signal, enabling precise operation in various circuits.

No. of Terminals: 8

Provides multiple connection points for flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-efficient PCB layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and efficient technology for small signal amplification and switching applications.

Transistor Element Material: SILICON

Silicon-based material for high performance and durability.

Maximum Drain Current (ID): 2.2 A

Capable of handling relatively high currents for various applications.

Maximum Drain-Source On Resistance: 0.24 ohm

Low on-resistance for efficient power transfer and minimal heat dissipation.

Terminal Position: DUAL

Two terminal positions for versatile connection options in circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF6216TRPBF-1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

IRF6216TRPBF-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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