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IRF6216TR

International Rectifier

IRF6216TR by International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e0;

Median Price

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6

In-Stock Inventory

1k+

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Chip Stock

USA . 69,050 parts In-Stock

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Bristol Electronics

USA . 3,795 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,560 parts In-Stock

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ComSIT USA

USA . 3,560 parts In-Stock

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Digiode

USA . 998 parts In-Stock

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Vyrian

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Modulus Dynamics

Lithuania . 9,077 parts In-Stock

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$0.365

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A-Z Elektronik GmbH

Germany . 4,926 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,284 parts In-Stock

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Corphita

USA . 28 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF6216TR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

200 mJ

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

19 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF6216TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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