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IPN50R3K0CEATMA1

Infineon Technologies

IPN50R3K0CEATMA1 by Infineon Technologies

Infineon's IPN50R3K0CEATMA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 3 ohm RDS(on), and operates in enhancement mode. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.329

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1 parts In-Stock

1+ parts

$0.464

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1

$0.464

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DigiKey

USA . 3,511 parts In-Stock

1+ parts

$0.620

100+ parts

$0.247

1k+ parts

$0.168

10k+ parts

$0.124

3,511

$0.620

$0.247

$0.168

$0.124

Newark

USA . 1,590 parts In-Stock

1+ parts

$0.687

100+ parts

$0.360

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-

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1,590

$0.687

$0.360

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Rochester

USA . 11,996 parts In-Stock

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Verical

USA . 11,300 parts In-Stock

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$0.153

11,300

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$0.153

RS (Exports)

UK . 8,980 parts In-Stock

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$0.124

8,980

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$0.124

Element14

Singapore . 3,345 parts In-Stock

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-

100+ parts

$0.329

1k+ parts

$0.229

10k+ parts

$0.225

3,345

-

$0.329

$0.229

$0.225

Mouser Electronics

USA . 3,025 parts In-Stock

1+ parts

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$0.128

3,025

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$0.128

Chip1Stop

Japan . 5 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 286 parts In-Stock

1+ parts

$0.113

100+ parts

-

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286

$0.113

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.222

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700

$0.222

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Vyrian

USA . 4,153 parts In-Stock

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4,153

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Rutronik

Germany . 3,000 parts In-Stock

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$0.147

3,000

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$0.147

Bristol Electronics

USA . 683 parts In-Stock

1+ parts

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100+ parts

$0.292

1k+ parts

$0.144

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683

-

$0.292

$0.144

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,817 parts In-Stock

1+ parts

$0.043

100+ parts

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3,817

$0.043

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Semicontronic

India . 3,734 parts In-Stock

1+ parts

$0.094

100+ parts

$0.092

1k+ parts

$0.091

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3,734

$0.094

$0.092

$0.091

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Corphita

USA . 88 parts In-Stock

1+ parts

$0.107

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88

$0.107

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.218

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$0.209

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2,000

$0.218

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$0.209

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Argo Parts USA

USA . 687 parts In-Stock

1+ parts

$0.222

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$0.215

687

$0.222

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$0.215

Aztec Data Supply Inc.

USA . 48,657 parts In-Stock

1+ parts

$0.740

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48,657

$0.740

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Microchip USA

USA . 1,107 parts In-Stock

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$0.947

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1,107

$0.947

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Corohmni

South Africa . 747 parts In-Stock

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$1.406

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747

$1.406

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Modulus Dynamics

Lithuania . 22,838 parts In-Stock

1+ parts

$1.799

100+ parts

$1.727

1k+ parts

$1.655

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22,838

$1.799

$1.727

$1.655

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Perfect Parts

USA . 23,845 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 19,584 parts In-Stock

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Continental Prestige Electronics

USA . 10,150 parts In-Stock

1+ parts

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$0.251

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$0.192

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$0.158

10,150

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$0.251

$0.192

$0.158

Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock the power of innovation with the IPN50R3K0CEATMA1 by Infineon Technologies. As a leader in small signal field effect transistors, Infineon delivers unparalleled quality and reliability. Ideal for switching applications, this N-channel transistor offers a breakthrough in performance with a minimum DS breakdown voltage of 500V and maximum drain-source on resistance of 3 ohms. Whether you're looking to enhance your products or streamline operations, the IPN50R3K0CEATMA1 provides the value, benefits, and advantages you need to stay ahead in today's competitive market. Elevate your technology with Infineon.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are more commonly used in electronic devices, offering good performance and efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can help protect the transistor from reverse voltage.

Transistor Application: SWITCHING

Ideal for switching applications, providing fast switching speeds and low power consumption.

Surface Mount: YES

Surface mount compatibility allows for easy and compact PCB assembly, saving space and improving efficiency.

Minimum DS Breakdown Voltage: 500 V

High breakdown voltage capability makes this transistor suitable for high voltage applications where robustness is required.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and mounting on the PCB, contributing to a more organized and efficient layout.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are well-suited for surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity, enabling precise switching and modulation.

No. of Terminals: 3

Having 3 terminals enables the transistor to be easily integrated into various circuit configurations with flexibility.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space on the PCB and offers a low profile for slim and compact device designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good performance, high efficiency, and reliability in different applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high performance, versatility, and reliability in electronic devices.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows the transistor to be used in various environmental conditions without performance degradation.

Terminal Finish: TIN

Tin terminal finish offers good solderability and conductivity, ensuring reliable electrical connections in the circuit.

Maximum Drain-Source On Resistance: 3 ohm

Low drain-source on resistance minimizes power loss and heat generation, making the transistor efficient for switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy connections and configurations in the circuit, enhancing flexibility and ease of use.

Case Connection: DRAIN

Drain case connection provides a reliable and secure connection point, ensuring proper functionality and performance of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) IPN50R3K0CEATMA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPN50R3K0CEATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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