Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IPG20N04S4L08AATMA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 0.0082 ohm RDS(on), and 80A IDM. Ideal for power management applications requiring high current handling capabilities in compact designs.
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$0.752
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$0.414
Digiode
$0.533
Nova Conductors
$0.898
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Corphita
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$0.880
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This material is durable and provides good protection for the internal components, making this FET a reliable choice.
N-channel FETs offer better performance and efficiency compared to P-channel FETs, making this product a suitable choice for high-power applications.
This configuration allows for better control and protection of the circuit, making this FET ideal for applications requiring reliability and precision.
Being surface mountable, this FET is easy to install and saves space on the PCB, making it a convenient choice for compact designs.
With a breakdown voltage of 40V, this FET can handle higher voltages without failure, making it suitable for high-voltage applications.
The rectangular shape of the package offers easy mounting and efficient use of space on the PCB, making this FET a practical choice for tight layouts.
Flat terminals make it easy to solder and secure connections, ensuring a reliable electrical connection for optimal performance.
Enhancement mode FETs offer better control over the flow of current, making this product a suitable choice for precise power regulation.
With two elements, this FET can handle more current and offers redundancy, making it a reliable choice for demanding applications.
With a high pulsed drain current rating, this FET can handle sudden spikes in current, making it suitable for applications with varying power demands.
The high avalanche energy rating allows this FET to withstand voltage spikes and sudden power surges, making it a robust choice for harsh operating conditions.
With eight terminals, this FET offers versatile connectivity options and ensures proper connections for optimal performance.
The small outline package style saves space on the PCB and offers easy integration into compact designs, making this FET a practical choice for miniaturized applications.
MOSFET technology ensures high performance and efficiency, making this FET a suitable choice for applications requiring low power consumption and heat dissipation.
Silicon-based transistors offer high reliability and good electrical properties, making this FET a dependable choice for long-term use.
The tin terminal finish provides corrosion resistance and ensures stable connections, making this FET a durable choice for challenging environments.
With a high maximum drain current rating, this FET can handle high-power applications with ease, making it a reliable choice for demanding tasks.
The low on-resistance ensures efficient power transfer and minimal heat dissipation, making this FET a suitable choice for high-efficiency applications.
Dual terminal position offers versatility in mounting and connection options, making this FET suitable for various circuit configurations.
Power Field Effect Transistors (FET) IPG20N04S4L08AATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
IPG20N04S4L08AATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
BAV99
Weitron Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;
1N4148WS
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931Z-5.0G
Onsemi
LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
2N2222A
Comset Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Fagor Electronica S Coop
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
Texas Instruments
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
1N4148
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Sangdest Microelectronics (Nanjing)
STL57N65M5
STMicroelectronics
STL57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 960mJ EAS, and 0.069 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a DRAIN case connection.
IRF3205ZSPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF3205ZSTRLPBF
Infineon Technologies
IRF3205ZSTRLPBF by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 440A. This transistor is commonly used for switching applications.
NDS7002A_NB9GGTXA
Fairchild Semiconductor
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
IRFZ44N,127
NXP Semiconductors
NXP Semiconductors' IRFZ44N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 160A IDM and 0.022 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W and can handle up to 175°C temperature.
IRF7309TRPBF
IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
FDS8949_F085
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
IRFR120NTRPBF
IRFR120NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 38A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.21 ohm On Resistance, and operates in ENHANCEMENT MODE.
NTD3055L104T4G
NTD3055L104T4G by Onsemi is a power FET with 60V DS breakdown voltage, 45A IDM, and 0.104 ohm RDS(on). It is an N-channel transistor for switching applications. Operating in enhancement mode, it has a max power dissipation of 48W and can handle up to 175°C temperature.
IRFH4251DTRPBF
IRFH4251DTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration and 120A Max Pulsed Drain Current. Ideal for SWITCHING applications, this transistor has a 0.0046 ohm Max Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
2N7002
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
IRF7842TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
FDS6982AS
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .0135 ohm; Package Style (Meter): SMALL OUTLINE;
FQP30N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; JESD-609 Code: e3;
CSD18543Q3A
CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
2N7000
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-247;
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;
IRF5305STRLPBF
IRF5305STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 110W and operates up to 175°C.
AUIRFR5305TR
AUIRFR5305TR by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 175°C.
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IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N04S4L11ATMA1
Infineon's IPG20N04S4L11ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0116 ohm RDS(on). Ideal for power applications requiring high drain current handling in compact designs.
IPG20N10S4L22ATMA1
IPG20N10S4L22ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
IPG20N06S4L26AATMA1
Infineon's IPG20N06S4L26AATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N10S4L22AATMA1
Infineon's IPG20N10S4L22AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N06S4L11ATMA1
IPG20N06S4L11ATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 80A IDM, and 0.0112 ohm max RDS(on). It is used in power applications due to its 165mJ EAS rating and separate configuration with built-in diode.
IPG20N04S4L11AATMA1
IPG20N04S4L11AATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0116 ohm Drain-Source On Resistance. It features 2 elements with built-in diode, suitable for applications requiring high pulsed drain current up to 80A such as power supplies and motor control systems.
IPG20N04S4L08ATMA1
Infineon Technologies' IPG20N04S4L08ATMA1 is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 80A and a max drain-source on resistance of 0.0082 ohm. This transistor is suitable for applications requiring high power and low resistance, such as power supplies and motor control systems.
IPG20N06S4L14AATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0137 ohm; Terminal Finish: TIN; No. of Elements: 2;
IPG20N06S2L65AATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Package Shape: RECTANGULAR;
IPG20N10S4L35ATMA1
Infineon Technologies' IPG20N10S4L35ATMA1 is a N-CHANNEL power FET with 100V DS breakdown voltage and 20A max drain current. It is suitable for applications requiring high power dissipation, such as automotive electronics and industrial control systems.
IPG20N06S2L65ATMA1
Infineon Technologies' IPG20N06S2L65ATMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 80A. This transistor is suitable for applications requiring high power and low resistance, such as automotive electronics or industrial control systems.
IPG20N06S2L35ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 20 A; JESD-30 Code: R-PDSO-F8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPG20N06S2L35AATMA1
Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IPG20N06S415AATMA1
Infineon's IPG20N06S415AATMA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0155 ohm RDS(on). Ideal for applications requiring high drain current handling in compact designs.
IPG20N04S4L07ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
IPG20N04S4L07AATMA1
Infineon's IPG20N04S4L07AATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N10S4L35AATMA1
Infineon's IPG20N10S4L35AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.035 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N06S2L65AUMA1
Infineon's IPG20N06S2L65AUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, 80A IDM, and 0.065 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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