Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon's IPG20N04S4L07AATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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Authorized Procurement Solutions
Provides durability and protection for the internal components, making the product reliable for long-term use.
Offers efficient current flow and performance, suitable for various applications.
Allows for versatile usage and flexibility in circuit design.
Enables easy installation on circuit boards, saving space and facilitating mass production.
Ensures safe operation within specified voltage limits, protecting the transistor from damage.
Facilitates efficient placement on the circuit board and allows for easy integration into electronic devices.
Provides enhanced performance and control over the transistor's operation.
Supports high-power applications and ensures reliable operation under peak load conditions.
Can withstand energy spikes and surges, making the transistor suitable for demanding environments.
Provides multiple connection options and flexibility in circuit design.
Allows the transistor to operate in a wide range of temperatures, suitable for various environments.
Ensures low power losses and high efficiency in the circuit.
Compliance with automotive industry standards ensures reliability for automotive applications.
Power Field Effect Transistors (FET) IPG20N04S4L07AATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
IPG20N04S4L07AATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LL4148
Secos
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
International Semiconductor
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Bkc Semiconductors
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADW
Texas Instruments
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
INA826AIDGKR
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
Shandong Yiguang Electronic Joint Stock
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Fagor Electronica S Coop
Semtech
NE555D
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
Fairchild Semiconductor
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
STP80NF10
STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
FQD17P06TM
Onsemi
FQD17P06TM by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.135 ohm Drain-Source On Resistance and can handle up to 44W power dissipation at 150°C.
FDB3632_F085
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
JANTX2N6796U
Defense Logistics Agency
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-CQCC-N15; Maximum Pulsed Drain Current (IDM): 32 A; Operating Mode: ENHANCEMENT MODE;
FQP47P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
BSC030P03NS3GXT
Infineon Technologies
BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.
2N7002K
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .34 A; Operating Mode: ENHANCEMENT MODE;
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
SI7116DN-T1-E3
Vishay Intertechnology
SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
FDN5618P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
IRF640NLPBF
IRF640NLPBF by Infineon Technologies is a N-CHANNEL FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE at up to 175°C.
IRF640STRRPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
LTC4451AV#TRMPBF
Analog Devices
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
NTD5867NLT4G
NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
FQP30N06L
FQP30N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM Pulsed Drain Current, 350mJ EAS Avalanche Energy Rating, and 0.045 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 79W at 175°C.
IRLML6401TR
International Rectifier
IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
IRF840PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
ZXMP6A13GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSP613PH6327XTSA1
BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
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IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N04S4L11ATMA1
Infineon's IPG20N04S4L11ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0116 ohm RDS(on). Ideal for power applications requiring high drain current handling in compact designs.
IPG20N10S4L22ATMA1
IPG20N10S4L22ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
IPG20N06S4L26AATMA1
Infineon's IPG20N06S4L26AATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N10S4L22AATMA1
Infineon's IPG20N10S4L22AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N06S4L11ATMA1
IPG20N06S4L11ATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 80A IDM, and 0.0112 ohm max RDS(on). It is used in power applications due to its 165mJ EAS rating and separate configuration with built-in diode.
IPG20N04S4L11AATMA1
IPG20N04S4L11AATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0116 ohm Drain-Source On Resistance. It features 2 elements with built-in diode, suitable for applications requiring high pulsed drain current up to 80A such as power supplies and motor control systems.
IPG20N04S4L08ATMA1
Infineon Technologies' IPG20N04S4L08ATMA1 is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 80A and a max drain-source on resistance of 0.0082 ohm. This transistor is suitable for applications requiring high power and low resistance, such as power supplies and motor control systems.
IPG20N06S4L14AATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0137 ohm; Terminal Finish: TIN; No. of Elements: 2;
IPG20N06S2L65AATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Package Shape: RECTANGULAR;
IPG20N10S4L35ATMA1
Infineon Technologies' IPG20N10S4L35ATMA1 is a N-CHANNEL power FET with 100V DS breakdown voltage and 20A max drain current. It is suitable for applications requiring high power dissipation, such as automotive electronics and industrial control systems.
IPG20N06S2L65ATMA1
Infineon Technologies' IPG20N06S2L65ATMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 80A. This transistor is suitable for applications requiring high power and low resistance, such as automotive electronics or industrial control systems.
IPG20N06S2L35ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 20 A; JESD-30 Code: R-PDSO-F8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPG20N06S2L35AATMA1
Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IPG20N06S415AATMA1
Infineon's IPG20N06S415AATMA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0155 ohm RDS(on). Ideal for applications requiring high drain current handling in compact designs.
IPG20N04S4L07ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
IPG20N10S4L35AATMA1
Infineon's IPG20N10S4L35AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.035 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 0.0082 ohm RDS(on), and 80A IDM. Ideal for power management applications requiring high current handling capabilities in compact designs.
IPG20N06S2L65AUMA1
Infineon's IPG20N06S2L65AUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, 80A IDM, and 0.065 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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