Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon's IPG20N06S4L14AATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0137 ohm RDS(ON). Ideal for power applications requiring high current handling in compact designs.
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DigiKey
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Rochester
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$0.775
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The plastic/epoxy package body material provides durability and protection for the internal components of the power FET, ensuring long-lasting performance.
N-channel FETs typically have lower on-resistance and higher efficiency compared to P-channel FETs, making them suitable for high-performance applications.
The separate configuration with built-in diode allows for efficient switching and helps in controlling the flow of current in the circuit.
Being surface mountable makes it easier to mount the FET on PCBs, saving space and simplifying the assembly process.
The high minimum breakdown voltage ensures that the FET can handle high voltages without failure, providing reliability in various applications.
Enhancement mode FETs offer better control and efficiency in power management applications, making them a preferred choice for many designs.
The high maximum pulsed drain current allows for handling high power spikes or surges, making it suitable for applications with varying loads.
The high avalanche energy rating indicates the FET's ability to handle sudden voltage spikes without breakdown, ensuring reliable performance in harsh conditions.
The high maximum drain current capability allows for handling high continuous load currents, making it suitable for power-intensive applications.
The low on-resistance helps in minimizing power losses and improving efficiency of the FET in conducting current, making it suitable for high-power applications.
Power Field Effect Transistors (FET) IPG20N06S4L14AATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
IPG20N06S4L14AATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
National Semiconductor
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
Shandong Yiguang Electronic Joint Stock
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
1N4148WS
Rugao Dachang Electronic
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taiwan Semiconductor
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
International Semiconductor
IRF540NLPBF
Infineon Technologies
Infineon's IRF540NLPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 185mJ EAS, and 0.044 ohm RDS(on). With a max power dissipation of 130W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
IRFB4227PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
BSP170PH6327XTSA1
Infineon's BSP170PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
IRFP250NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
SIR873DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
IRFP460
Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
FDS4675
FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
IRF9530
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Maximum Drain Current (ID): 12 A;
SI7288DP-T1-GE3
Vishay Intertechnology's SI7288DP-T1-GE3 is an N-channel FET with 2 separate elements and built-in diode, ideal for switching applications. Features include max pulsed drain current of 50A, avalanche energy rating of 5mJ, and max power dissipation of 15.6W. With a max operating temperature of 150°C, this MOSFET has a drain-source on resistance of 0.019 ohm and can handle a max drain current of 10A.
FQD12N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;
IRF9530PBF
Vishay Intertechnology's IRF9530PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.3 ohm RDS(on), and 88W max power dissipation.
FDS2572
FDS2572 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 4.9A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures from -55 to 150 °C.
IRF840PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-220AB;
DMPH3010LK3-13
Diodes Incorporated
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
SI7116DN-T1-E3
SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
IRF640STRLPBF
Vishay Intertechnology's IRF640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 580mJ EAS, and 0.18 ohm RDS(on). With a max power dissipation of 130W and operating temperature up to 175°C, it suits various high-power electronic designs.
IRF9530NSTRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
ZXMP6A13GTA
ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.
IRF640NLPBF
IRF640NLPBF by Infineon Technologies is a N-CHANNEL FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE at up to 175°C.
IRF640SPBF
Vishay Intertechnology's IRF640SPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W.
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IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N04S4L11ATMA1
Infineon's IPG20N04S4L11ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0116 ohm RDS(on). Ideal for power applications requiring high drain current handling in compact designs.
IPG20N10S4L22ATMA1
IPG20N10S4L22ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
IPG20N06S4L26AATMA1
Infineon's IPG20N06S4L26AATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N10S4L22AATMA1
Infineon's IPG20N10S4L22AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N06S4L11ATMA1
IPG20N06S4L11ATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 80A IDM, and 0.0112 ohm max RDS(on). It is used in power applications due to its 165mJ EAS rating and separate configuration with built-in diode.
IPG20N04S4L11AATMA1
IPG20N04S4L11AATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0116 ohm Drain-Source On Resistance. It features 2 elements with built-in diode, suitable for applications requiring high pulsed drain current up to 80A such as power supplies and motor control systems.
IPG20N04S4L08ATMA1
Infineon Technologies' IPG20N04S4L08ATMA1 is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 80A and a max drain-source on resistance of 0.0082 ohm. This transistor is suitable for applications requiring high power and low resistance, such as power supplies and motor control systems.
IPG20N06S2L65AATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Package Shape: RECTANGULAR;
IPG20N10S4L35ATMA1
Infineon Technologies' IPG20N10S4L35ATMA1 is a N-CHANNEL power FET with 100V DS breakdown voltage and 20A max drain current. It is suitable for applications requiring high power dissipation, such as automotive electronics and industrial control systems.
IPG20N06S2L65ATMA1
Infineon Technologies' IPG20N06S2L65ATMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 80A. This transistor is suitable for applications requiring high power and low resistance, such as automotive electronics or industrial control systems.
IPG20N06S2L35ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 20 A; JESD-30 Code: R-PDSO-F8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPG20N06S2L35AATMA1
Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IPG20N06S415AATMA1
Infineon's IPG20N06S415AATMA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0155 ohm RDS(on). Ideal for applications requiring high drain current handling in compact designs.
IPG20N04S4L07ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
IPG20N04S4L07AATMA1
Infineon's IPG20N04S4L07AATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N10S4L35AATMA1
Infineon's IPG20N10S4L35AATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A IDM, and 0.035 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 0.0082 ohm RDS(on), and 80A IDM. Ideal for power management applications requiring high current handling capabilities in compact designs.
IPG20N06S2L65AUMA1
Infineon's IPG20N06S2L65AUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, 80A IDM, and 0.065 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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