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IKQ50N120CT2XKSA1

Infineon Technologies

IKQ50N120CT2XKSA1 by Infineon Technologies

IKQ50N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 100A. It has a nominal turn-off time of 530ns and a turn-on time of 79ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installations.

Median Price

$8.883

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14

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Arrow

USA . 94 parts In-Stock

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$1.298

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$1.298

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Chip1Stop

Japan . 213 parts In-Stock

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$6.530

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$6.530

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Farnell

UK . 193 parts In-Stock

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$8.650

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$4.710

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$4.510

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193

$8.650

$4.710

$4.510

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DigiKey

USA . 1,323 parts In-Stock

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$10.750

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$6.400

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$5.060

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1,323

$10.750

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Mouser Electronics

USA . 890 parts In-Stock

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$10.750

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$5.780

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890

$10.750

$5.780

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Newark

USA . 20 parts In-Stock

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$12.330

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$7.580

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20

$12.330

$7.580

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Element14

Singapore . 193 parts In-Stock

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$14.530

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$8.440

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$8.340

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193

$14.530

$8.440

$8.340

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Verical

USA . 2,170 parts In-Stock

1+ parts

-

100+ parts

$6.325

1k+ parts

$5.662

10k+ parts

$5.325

2,170

-

$6.325

$5.662

$5.325

Rochester

USA . 2,170 parts In-Stock

1+ parts

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$5.060

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$4.530

10k+ parts

$4.260

2,170

-

$5.060

$4.530

$4.260

RS (Exports)

UK . 1 parts In-Stock

1+ parts

-

100+ parts

$9.116

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$9.251

10k+ parts

$8.770

1

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$9.116

$9.251

$8.770

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Digiode

USA . 804 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Chip Stock

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Vyrian

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Modulus Dynamics

Lithuania . 50 parts In-Stock

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$1.902

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$1.902

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50

$1.902

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$1.902

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Ampacity Inc.

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$5.070

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Corphita

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Component Stockers USA

USA . 3,756 parts In-Stock

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$7.410

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$6.960

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$7.410

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Netroflash

USA . 50 parts In-Stock

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$8.720

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$10.620

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$7.260

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QUARKTWIN TECHNOLOGY LTD

USA . 15,242 parts In-Stock

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Microchip USA

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USA . 1,000 parts In-Stock

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Overview

Power up your applications with the IKQ50N120CT2XKSA1 Insulated Gate Bipolar Transistor by Infineon Technologies. Designed for power control, this N-CHANNEL transistor offers a reliable single configuration with a built-in diode, ensuring efficient performance. With a maximum collector-emitter voltage of 1200V and a collector current of 100A, this transistor is perfect for a wide range of power applications. Trust in the quality and expertise of Infineon Technologies to bring you top-notch components that deliver value, benefits, and advantages to meet all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency, making this product suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves overall performance by allowing for better protection against voltage spikes and reverse current flows.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is capable of handling high voltages and currents efficiently.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and apply in various electronic systems, providing versatility in usage.

Terminal Form: THROUGH-HOLE

Through-hole mounting allows for easier and more secure installation, ensuring better connection and reliability.

Nominal Turn Off Time (toff): 530 ns

The fast turn-off time helps in reducing switching losses and improving efficiency in power control applications.

No. of Terminals: 3

Having 3 terminals allows for easier connection and integration within electronic circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure and stable mounting option, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating makes this IGBT suitable for applications that require handling of high voltages safely.

Transistor Element Material: SILICON

Silicon is a common and reliable material for semiconductor devices, ensuring good performance and longevity.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for usage in various environments, making the product versatile and reliable.

Maximum Collector Current (IC): 100 A

With a high maximum collector current rating, this IGBT can handle high power levels with ease, making it suitable for power control applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability in connections.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and connection, making it user-friendly.

Nominal Turn On Time (ton): 79 ns

The fast turn-on time allows for quick response in power control applications, improving efficiency and performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKQ50N120CT2XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

530 ns

Nominal Turn On Time (ton):

79 ns

Trade Compliance

IKQ50N120CT2XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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