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IKP15N65F5XKSA1

Infineon Technologies

IKP15N65F5XKSA1 by Infineon Technologies

IKP15N65F5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and Ptot of 105W. Ideal for power control applications due to its fast turn-off time (toff) of 195ns and high collector-emitter voltage rating of 650V. This single transistor with built-in diode operates in temperatures ranging from -40°C to 175°C.

Median Price

$2.084

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 8 parts In-Stock

1+ parts

$1.560

100+ parts

-

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8

$1.560

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Farnell

UK . 4 parts In-Stock

1+ parts

$2.270

100+ parts

$1.200

1k+ parts

$0.829

10k+ parts

-

4

$2.270

$1.200

$0.829

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Element14

Singapore . 48 parts In-Stock

1+ parts

$2.765

100+ parts

$1.826

1k+ parts

$1.267

10k+ parts

-

48

$2.765

$1.826

$1.267

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Verical

USA . 20,500 parts In-Stock

1+ parts

-

100+ parts

-

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$1.301

10k+ parts

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20,500

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-

$1.301

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RS (Exports)

UK . 665 parts In-Stock

1+ parts

-

100+ parts

$2.084

1k+ parts

$2.497

10k+ parts

-

665

-

$2.084

$2.497

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 773 parts In-Stock

1+ parts

$0.891

100+ parts

-

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773

$0.891

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Vyrian

USA . 134 parts In-Stock

1+ parts

$0.938

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-

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134

$0.938

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-

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TME

Poland . 92 parts In-Stock

1+ parts

$1.450

100+ parts

$1.240

1k+ parts

-

10k+ parts

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92

$1.450

$1.240

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-

Schukat

Germany . 302 parts In-Stock

1+ parts

$2.675

100+ parts

$1.540

1k+ parts

-

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302

$2.675

$1.540

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 899 parts In-Stock

1+ parts

$0.844

100+ parts

-

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899

$0.844

-

-

-

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.891

100+ parts

$0.811

1k+ parts

$0.731

10k+ parts

-

450

$0.891

$0.811

$0.731

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Modulus Dynamics

Lithuania . 5,376 parts In-Stock

1+ parts

$1.537

100+ parts

$1.476

1k+ parts

$1.414

10k+ parts

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5,376

$1.537

$1.476

$1.414

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Continental Prestige Electronics

USA . 324 parts In-Stock

1+ parts

$2.160

100+ parts

$1.470

1k+ parts

$1.110

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324

$2.160

$1.470

$1.110

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Microchip USA

USA . 3,884 parts In-Stock

1+ parts

$21.255

100+ parts

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3,884

$21.255

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Andel Nordic

Denmark . 357 parts In-Stock

1+ parts

$32.490

100+ parts

-

1k+ parts

$22.740

10k+ parts

$22.740

357

$32.490

-

$22.740

$22.740

QUARKTWIN TECHNOLOGY LTD

USA . 14,739 parts In-Stock

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14,739

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Perfect Parts

USA . 2,680 parts In-Stock

1+ parts

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2,680

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iodParts Technologies Inc.

India . 500 parts In-Stock

1+ parts

-

100+ parts

$2.708

1k+ parts

-

10k+ parts

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500

-

$2.708

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Overview

Unlock the power of advanced technology with the IKP15N65F5XKSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that provide exceptional performance in power control applications. With a maximum collector-emitter voltage of 650V and a nominal turn off time of 195ns, this N-channel IGBT offers reliable and efficient operation. Trust in the expertise of Infineon to bring you high-value solutions that exceed expectations. Elevate your projects with the IKP15N65F5XKSA1 and experience the benefits of superior quality and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the IGBT, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance, higher conductivity, and faster switching speeds, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing voltage spikes and provides a more reliable and efficient power control solution.

Transistor Application: POWER CONTROL

This IGBT is specifically designed for power control applications, ensuring efficient and reliable performance in controlling power circuits.

Maximum VCEsat: 2.1 V

The low VCEsat of 2.1 V results in lower power dissipation and higher efficiency in power switching applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various electronic systems and designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and easy soldering during assembly, ensuring reliable performance.

Nominal Turn Off Time (toff): 195 ns

The fast turn-off time of 195 ns helps in reducing switching losses and improving overall efficiency in power control applications.

No. of Terminals: 3

Having 3 terminals allows for easy connections and integration into existing circuit designs.

Maximum Power Dissipation (Abs): 105 W

With a high maximum power dissipation of 105 W, this IGBT can handle high power loads and ensure reliable operation in demanding applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKP15N65F5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

195 ns

Nominal Turn On Time (ton):

26 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IKP15N65F5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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