Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 78 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
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Insulated Gate Bipolar Transistors (IGBT) BSM50GB120DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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BSM50GB120DN2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1554216004
Molex
WIRE AND CABLE;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
1N4148WS
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
2N7002
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
AH180-WG-7
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
LM317T
Tt Electronics Plc
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;
IXGH32N170A
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Transistor Element Material: SILICON; No. of Elements: 1;
IXDN75N120
Littelfuse
IXDN75N120 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 660W power dissipation. Ideal for motor control applications due to its fast ton of 150ns and low toff of 700ns. Recognized by UL, it features a flange mount package style for easy installation.
IXXX200N60C3
The Littelfuse IXXX200N60C3 is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 340A. Ideal for POWER CONTROL applications, it has a toff of 240ns and can handle up to 1630W power dissipation. Operating temperature ranges from -55°C to 175°C, making it suitable for various industrial uses.
STGD10NC60HT4
STMicroelectronics
STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.
BSM150GT120DN2
Siemens
N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Turn Off Time (toff): 900 ns;
MG400V1US51A
Mitsubishi Electric
The Mitsubishi Electric MG400V1US51A is an N-CHANNEL IGBT transistor with a max VCEsat of 4.5V and IC of 400A. Ideal for power control applications, it has a toff of 770ns and ton of 210ns. With a max operating temperature of 150°C, this UL RECOGNIZED component offers high power dissipation at 2750W in a RECTANGULAR package style.
FGL40N120ANDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 64 A; Nominal Turn Off Time (toff): 165 ns;
IRG4PH50SPBF
Infineon Technologies
IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IRG4IBC20KDPBF
IRG4IBC20KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 34W. It has a Nominal Turn Off Time of 380ns, making it ideal for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities. The package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for various power control systems operating up to 150°C.
STGW25H120DF2
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
STGWA50IH65DF
STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
FGD3040G2-F085V
Onsemi
FGD3040G2-F085V by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector current (IC) of 41A. It is commonly used for power control applications due to its high power dissipation of 150W and small outline package style.
FGD5T120SH
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
IRG4BC30W-SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
V23990-K230-F40-/1A/-PM
Vincotech
Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.
IXBX75N170
IXBX75N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. Features include 840ns turn-off time and -55 to 150 °C operating temperature range.
FP35R12KT4B15BOSA1
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
HGTD3N60C3S9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Nominal Turn Off Time (toff): 325 ns; Case Connection: COLLECTOR;
FS50R07W1E3B11ABOMA1
Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
IXA60IF1200NA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 88 A; Nominal Turn On Time (ton): 110 ns;
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BSM50GP120
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 80 A; Terminal Form: UNSPECIFIED;
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 35;
BSM50GP120BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
BSM50GD120DN2BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 72 A; Nominal Turn On Time (ton): 100 ns; Terminal Form: UNSPECIFIED;
BSM50GD120DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;
BSM50GD120DN2
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 72 A; Case Connection: ISOLATED;
BSM50GB120DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 78 A; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED;
BSM50GAL120D
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
BSM50GB120D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 50 A; No. of Elements: 1; Maximum VCEsat: 2.8 V; Maximum Collector-Emitter Voltage: 1200 V;
BSM50GB160D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 70 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1600 V; Maximum Gate-Emitter Voltage: 20 V;
BSM50GD120DLC
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 85 A; Maximum Gate-Emitter Voltage: 20 V;
BSM50GB120DLCHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 115 A; Package Body Material: UNSPECIFIED; Package Style (Meter): FLANGE MOUNT;
BSM50GD120DLCE3226
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
BSM50GB100D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 50 A; No. of Elements: 2;
BSM50GB170DN2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 72 A; Package Style (Meter): FLANGE MOUNT;
BSM50GB120DL
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 90 A; Maximum VCEsat: 2.6 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1200 V;
BSM50GB170DN2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 72 A; No. of Terminals: 7; Transistor Application: POWER CONTROL;
BSM50GB60DLC
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED;
BSM50GAL100D
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 50 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 90 A; Terminal Position: UPPER; Qualification: Not Qualified;
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