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2ED300C17-ST

Infineon Technologies

2ED300C17-ST by Infineon Technologies

N-Channel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum Operating Temperature: -25 Cel; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 85 Cel;

Median Price

$183.904

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 44 parts In-Stock

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$179.189

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Vyrian

USA . 919 parts In-Stock

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$188.620

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919

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VNN

France . 75 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Pegasus Components GmbH

Germany . 8 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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Atlantic Semiconductor

USA . 8 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 13,523 parts In-Stock

1+ parts

$1.364

100+ parts

$1.309

1k+ parts

$1.255

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13,523

$1.364

$1.309

$1.255

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$54.980

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$38.485

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$38.485

1,200

$54.980

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$38.485

$38.485

Ampacity Inc.

Singapore . 91 parts In-Stock

1+ parts

$160.340

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91

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Corphita

USA . 503 parts In-Stock

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$169.758

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 1,170 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Overview

Infineon Technologies Half-Bridge Gate Driver ICs are based on level-shifter Silicon On Insulator (SOI) technology. This technology integrates a low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2ED300C17-ST attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

2ED300C17-ST Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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