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HGTP15N120C3

Harris Semiconductor

HGTP15N120C3 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 35 A; Package Style (Meter): FLANGE MOUNT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Supply Digital

USA . 1,463 parts In-Stock

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100+ parts

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1k+ parts

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10k+ parts

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1,463

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP15N120C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

820 ns

Nominal Turn On Time (ton):

42 ns

Trade Compliance

HGTP15N120C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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