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HGTP10N120B3

Harris Semiconductor

HGTP10N120B3 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP10N120B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

HGTP10N120B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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