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HGTD1N120CNS9A

Harris Semiconductor

HGTD1N120CNS9A by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6.2 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

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1k+

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USA . 864 parts In-Stock

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USA . 730 parts In-Stock

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730

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Supply Digital

USA . 2,654 parts In-Stock

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2,654

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Corphita

USA . 64 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD1N120CNS9A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

75 ns

Nominal Turn On Time (ton):

13 ns

Trade Compliance

HGTD1N120CNS9A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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