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CA3086MAM96

Harris Semiconductor

CA3086MAM96 by Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CA3086MAM96 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Harris Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

MS-012AB

JESD-30 Code:

R-PDSO-G14

No. of Elements:

5

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CA3086MAM96 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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