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MRF21125SR3

Freescale Semiconductor

MRF21125SR3 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; No. of Elements: 1; Transistor Application: AMPLIFIER;

Median Price

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4

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1k+

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Digiode

USA . 3,921 parts In-Stock

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Vyrian

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Anansix

USA . 1,830 parts In-Stock

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Cyclops Electronics Ltd

UK . 325 parts In-Stock

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One Stop Electronics

USA . 2,276 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,242 parts In-Stock

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Corphita

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UNI Independent Distributors

Spain . 1,811 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF21125SR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF21125SR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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