Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; Maximum Turn On Time (ton): 128 ns; JESD-30 Code: R-PSSO-F2;
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Power Field Effect Transistors (FET) FDBL0150N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
Avalanche Energy Rating (EAS):
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Maximum Drain Current (Abs) (ID):
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JESD-609 Code:
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Maximum Operating Temperature:
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Package Style (Meter):
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FDBL0150N80 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Design/Specification - Gate Resistance 25/Jul/2016 Logo 17/Aug/2017
PCN Assembly/Origin - Wafer Fab Change 28/Sep/2021
PCN Packaging - Mult Devices 24/Oct/2017
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Starsea Electronics
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
Tt Electronics Plc
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
NX3008NBK,215
NXP Semiconductors
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
BSP315PH6327XTSA1
Infineon's BSP315PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for power applications. Features include 4.68A IDM, 24mJ EAS, and 0.8 ohm RDS(ON). Suitable for automotive electronics due to AEC-Q101 compliance and high temp rating of 150°C.
FQP27P06
Onsemi
FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
JANTX2N6796
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;
STP40NF10L
STMicroelectronics
STP40NF10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.036 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C temperature.
FDS8858CZ
FDS8858CZ by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 30V DS breakdown voltage, 20A max pulsed drain current, and 0.017 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150°C, it's suitable for various electronic designs.
IRF640NSTRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
SI4946BEY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
IRFP460
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Operating Temperature: 150 Cel;
FDMS86252L
FDMS86252L by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 30A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 50W and can withstand temperatures up to 150°C.
NDT3055
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G4;
FDT439N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
IRFP460APBF
Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
LND150N8-G
Microchip Technology
LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
IRF640STRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 18 A;
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
IRLML2502TRPBF
IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
FQD16N25CTM
FQD16N25CTM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 250V. It is an N-channel transistor with a max drain current of 16A and a max power dissipation of 160W. This transistor is commonly used for switching applications.
G2R1000MT17D
Genesic Semiconductor
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FDBL86062-F085
FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
FDBL86062_F085
Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
FDBL86361-F085
FDBL86361-F085 by Onsemi is an N-CHANNEL Power FET with 80V DS Breakdown Voltage and 300A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 820mJ EAS, and 0.0014 ohm RDS(on). Operating from -55 to 175 °C, this MOSFET is designed for high-power requirements in compact systems.
FDBL86361_F085
Fairchild Semiconductor's FDBL86361_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features a built-in diode, 300A Drain Current, and 0.0014 ohm On Resistance. Operating in Enhancement Mode, it has an Avalanche Energy Rating of 820mJ and can withstand temperatures from -55 to 175°C.
FDBL0200N100
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; Maximum Turn Off Time (toff): 59 ns; Peak Reflow Temperature (C): 245;
FDBL0200N100 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a built-in diode, 300A Drain Current, and 0.002 ohm Drain-Source Resistance. Ideal for SWITCHING applications in small outline packages, operating b/w -55 to 175 °C.
FDBL86210_F085
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Peak Reflow Temperature (C): 245; Maximum Drain Current (Abs) (ID): 169 A;
FDBL86210-F085
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Finish: Matte Tin (Sn) - annealed; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDBL86066-F085
FDBL86066-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 185A, 0.0041 ohm Drain-Source Resistance, and 93.6mJ Avalanche Energy Rating. This METAL-OXIDE SEMICONDUCTOR transistor operates in ENHANCEMENT MODE and has a max power dissipation of 300W at 175°C.
FDBL0150N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; No. of Terminals: 2; Minimum DS Breakdown Voltage: 80 V;
FDBL86063-F085
FDBL86063-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max ID of 240A and 0.0026 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, this transistor has an EAS of 160mJ and can handle up to 357W power dissipation.
FDBL86561_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
FDBL86561-F085
FDBL86561-F085 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a built-in diode, operates in enhancement mode, and has a max ID of 300A. Ideal for switching applications, this MOSFET has an EAS rating of 1167mJ and can withstand temperatures from -55 to 175°C.
FDBL0110N60
FDBL0110N60 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a Drain Current of 300A and Drain-Source Resistance of 0.0011 ohm. This PLASTIC/EPOXY transistor operates b/w -55 to 175 °C, suitable for surface mount designs.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-F2; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 300 A;
FDBL0630N150
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Drain-Source On Resistance: .0063 ohm; Package Body Material: PLASTIC/EPOXY;
FDBL0630N150 by Onsemi is a Power FET with 150V DS Breakdown Voltage, 169A Drain Current, and 0.0063 ohm On Resistance. Ideal for switching applications due to its N-CHANNEL configuration and built-in diode. Operates in Enhancement Mode with fast turn-on/off times of 80ns/130ns at temperatures ranging from -55°C to 175°C.
FDBL0210N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: Matte Tin (Sn) - annealed; JEDEC-95 Code: MO-299A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Application: SWITCHING; JESD-609 Code: e3;
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