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BSM400GA120DN2S

Eupec & Kg

BSM400GA120DN2S by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2700 W; Maximum Collector Current (IC): 550 A; Maximum VCEsat: 3 V;

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Lifecycle Status

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4

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1k+

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Digiode

USA . 605 parts In-Stock

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Vyrian

USA . 603 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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Modulus Dynamics

Lithuania . 16,442 parts In-Stock

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$0.481

100+ parts

$0.462

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$0.443

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16,442

$0.481

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Northwest PG Solutions

USA . 1,024 parts In-Stock

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$2.392

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$2.392

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Corphita

USA . 227 parts In-Stock

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227

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Native Components

USA . 128 parts In-Stock

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$2.110

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128

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$2.110

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM400GA120DN2S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

630 ns

Nominal Turn On Time (ton):

210 ns

Maximum VCEsat:

3 V

Trade Compliance

BSM400GA120DN2S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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