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ZXTD618MCTA

Diodes Incorporated

ZXTD618MCTA by Diodes Incorporated

ZXTD618MCTA by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. Features include 3W power dissipation, 20V max collector-emitter voltage, and 4.5A max collector current. With a transition frequency of 140MHz, it's suitable for high-speed operations in small outline packages.

Median Price

$0.830

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,980 parts In-Stock

1+ parts

$0.830

100+ parts

$0.456

1k+ parts

$0.367

10k+ parts

-

2,980

$0.830

$0.456

$0.367

-

Mouser Electronics

USA . 2,949 parts In-Stock

1+ parts

$0.830

100+ parts

$0.456

1k+ parts

$0.334

10k+ parts

$0.275

2,949

$0.830

$0.456

$0.334

$0.275

Element14

Singapore . 3,000 parts In-Stock

1+ parts

$0.839

100+ parts

$0.501

1k+ parts

$0.400

10k+ parts

-

3,000

$0.839

$0.501

$0.400

-

DigiKey

USA . 700 parts In-Stock

1+ parts

$1.250

100+ parts

$0.519

1k+ parts

$0.367

10k+ parts

$0.284

700

$1.250

$0.519

$0.367

$0.284

Verical

USA . 414,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.275

414,000

-

-

-

$0.275

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Farnell

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.506

1k+ parts

$0.384

10k+ parts

$0.345

3,000

-

$0.506

$0.384

$0.345

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 89 parts In-Stock

1+ parts

$0.916

100+ parts

$0.728

1k+ parts

$0.663

10k+ parts

$0.592

89

$0.916

$0.728

$0.663

$0.592

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.864

100+ parts

$0.512

1k+ parts

$0.326

10k+ parts

$0.272

3,000

$0.864

$0.512

$0.326

$0.272

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.387

100+ parts

$1.262

1k+ parts

$1.137

10k+ parts

-

600

$1.387

$1.262

$1.137

-

Perfect Parts

USA . 25,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,711

-

-

-

-

RC Electronics

USA . 5,400 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

$0.370

10k+ parts

$0.360

5,400

-

$0.390

$0.370

$0.360

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Kepictronics

USA . 2,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,690

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 1,531 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,531

-

-

-

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Overview

The ZXTD618MCTA by Diodes Incorporated is a top-of-the-line small signal bipolar junction transistor that is designed for switching applications. With a maximum collector-emitter voltage of 20V and a minimum DC current gain of 100, this NPN transistor offers superior performance and reliability. Its compact rectangular package makes it ideal for surface mount applications, providing seamless integration into various electronic devices. Trust in Diodes Incorporated's expertise and innovation to deliver a high-quality product that meets your needs. Experience the value and benefits that the ZXTD618MCTA brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, enhancing the overall durability of the transistor.

Polarity or Channel Type: NPN

Commonly used type of BJT which allows for easy integration into various circuit designs.

Transistor Application: SWITCHING

Ideal for applications involving switching operations due to its design and specifications.

Maximum Power Dissipation (Abs): 3 W

Capable of handling higher power dissipation, making it suitable for demanding environments.

Minimum DC Current Gain (hFE): 100

Provides good amplification capability for the transistor, ensuring reliable performance in circuits.

Maximum Collector-Emitter Voltage: 20 V

Allows for higher voltage handling capacity, making it versatile for different circuit requirements.

Maximum Collector Current (IC): 4.5 A

Capable of handling higher current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for faster switching speeds in circuit applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTD618MCTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTD618MCTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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