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ZXTD09N50DE6TA

Diodes Incorporated

ZXTD09N50DE6TA by Diodes Incorporated

ZXTD09N50DE6TA by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 1A, and transition frequency of 215MHz. The package is small outline with gull wing terminals, suitable for surface mount assembly.

Median Price

$1.186

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,193 parts In-Stock

1+ parts

$1.186

100+ parts

$0.658

1k+ parts

$0.535

10k+ parts

$0.511

2,193

$1.186

$0.658

$0.535

$0.511

Mouser Electronics

USA . 2,455 parts In-Stock

1+ parts

$1.380

100+ parts

$0.645

1k+ parts

$0.453

10k+ parts

$0.385

2,455

$1.380

$0.645

$0.453

$0.385

DigiKey

USA . 14,400 parts In-Stock

1+ parts

$1.560

100+ parts

$0.659

1k+ parts

$0.472

10k+ parts

$0.373

14,400

$1.560

$0.659

$0.472

$0.373

Newark

USA . 1,986 parts In-Stock

1+ parts

$1.630

100+ parts

$0.899

1k+ parts

$0.707

10k+ parts

-

1,986

$1.630

$0.899

$0.707

-

Verical

USA . 321,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.373

321,000

-

-

-

$0.373

Future Electronics

Canada . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

9,000

-

-

-

$0.345

Element14

Singapore . 2,193 parts In-Stock

1+ parts

-

100+ parts

$0.675

1k+ parts

$0.584

10k+ parts

-

2,193

-

$0.675

$0.584

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Technoshack Inc.

Canada . 2,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,780

-

-

-

-

Semtec, LLC

USA . 1,958 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,958

-

-

-

-

Florida Circuit

USA . 876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

876

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

320

-

-

-

-

NAC Semi

USA . 58 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

58

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 44,157 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

-

10k+ parts

-

44,157

$0.293

-

-

-

Perfect Parts

USA . 42,796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,796

-

-

-

-

Lixinc

USA . 12,734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,734

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Continental Prestige Electronics

USA . 2,873 parts In-Stock

1+ parts

-

100+ parts

$0.615

1k+ parts

$0.401

10k+ parts

-

2,873

-

$0.615

$0.401

-

iodParts Technologies Inc.

India . 1,867 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,867

-

-

-

-

Overview

Experience high-quality performance with the ZXTD09N50DE6TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch small signal bipolar junction transistors for various applications such as switching. This NPN transistor offers exceptional value with its efficient design and reliable operation, making it the perfect choice for your electronic projects. Trust Diodes Incorporated to provide you with the best in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose amplification and switching circuits, offering versatility.

Configuration: SEPARATE, 2 ELEMENTS

The separate 2 elements configuration allows for flexibility in circuit design and application.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient on/off control.

Surface Mount: YES

Surface mount capability makes for easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 1.7 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on a PCB.

Terminal Form: GULL WING

Gull wing terminals offer good mechanical stability and ease of soldering during assembly.

No. of Elements: 2

Having 2 elements provides increased functionality and design options in a single package.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, expanding the range of applications it can be used in.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for a variety of circuit requirements.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections.

Nominal Transition Frequency (fT): 215 MHz

High transition frequency allows for high-speed switching and amplification, making it ideal for fast circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTD09N50DE6TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTD09N50DE6TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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