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ZXTD617MCTA

Diodes Incorporated

ZXTD617MCTA by Diodes Incorporated

ZXTD617MCTA by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max power dissipation of 3W, hFE of 150, and can handle up to 4.5A collector current. With a max operating temp of 150°C and peak reflow temp of 260°C, it's suitable for small outline packages in surface mount designs.

Median Price

$0.552

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,442 parts In-Stock

1+ parts

$0.830

100+ parts

$0.500

1k+ parts

$0.356

10k+ parts

$0.315

6,442

$0.830

$0.500

$0.356

$0.315

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.830

100+ parts

$0.500

1k+ parts

$0.356

10k+ parts

$0.286

3,000

$0.830

$0.500

$0.356

$0.286

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.250

3,000

-

-

-

$0.250

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.275

3,000

-

-

-

$0.275

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,868 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

-

4,868

$0.234

-

-

-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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100+ parts

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25,000

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Lixinc

USA . 17,953 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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17,953

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-

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Perfect Parts

USA . 17,862 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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17,862

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QUARKTWIN TECHNOLOGY LTD

USA . 13,760 parts In-Stock

1+ parts

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100+ parts

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13,760

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Experience the peak of performance with the ZXTD617MCTA by Diodes Incorporated. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor is designed for switching applications, offering seamless operation and reliability. With a superior design and top-notch materials, this NPN transistor ensures optimal functionality and efficiency. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the ZXTD617MCTA delivers unparalleled value and benefits. Trust in Diodes Incorporated for cutting-edge technology that elevates your experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, making this transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for current to flow from the collector to the emitter when a small current is applied to the base, making it ideal for switching applications.

Configuration: SEPARATE, 2 ELEMENTS

With separate elements and two transistors in one package, this product offers flexibility in circuit design and can be used in various configurations.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly turn on and off, making it suitable for controlling electronic devices and circuits.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power loads and operate reliably under varying conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that this transistor can be used in a wide range of environments without overheating.

Maximum Collector Current (IC): 4.5 A

The high maximum collector current of 4.5A allows this transistor to handle large amounts of current, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 120 MHz

With a high nominal transition frequency of 120 MHz, this transistor is capable of fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTD617MCTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTD617MCTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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